IS43/46QR85120B Long-term Support World Class Quality IS43/46QR16256B AUGUST 2021 512Mbx8, 256Mbx16 4Gb DDR4 SDRAM FEATURES Standard Voltage : VDD = VDDQ = 1.2V, VPP=2.5V Signal Integrity High speed data transfer rates with system frequency - Internal VREFDQ Training up to 2666 Mbps - Read Preamble Training Data Integrity - Gear Down Mode - Auto Self Refresh (ASR) by DRAM built-in TS - Per DRAM Adressability - Auto Refresh and Self Refresh Modes - Configurable DS for system compatibility DRAM access bandwidth -Configurable On-Die Termination - Separated IO gating structures by Bank Groups - Data bus Inversion (DBI) - Self Refresh Abort - ZQ Calibration for DS/ODT impedance accuracy via external - Fine Granularity Refresh ZQ pad (240 ohm +/- 1%) Signal Synchronization Power Saving and efficiency - Write Leveling via MR settings - POD with VDDQ termination - Read Leveling via MPR - Command/Address Latency (CAL) Reliability & Error Handling - Maximum Power Saving - Command/Address Parity - Low power Auto Self Refresh (LPASR) - Data bus Write CRC Operating Temperature - MPR readout o o - Commercial (Tc = 0 Cto +95 C) - Boundary Scan (x16 only) o o -Industrial (Tc = -40 Cto +95 C) Speed Grade (CL-TRCD-TRP) o o - Automotive A1 (Tc = - 40 Cto +95 C) - 2400Mbps / 16-16-16 (-083R) o o - Automotive A2 (Tc = -40 C to +105 C) - 2666Mbps/ 18-18-18 (-075U) o o - Automotive A3 (Tc = -40 C to +125 C) ADDRESS TABLE PROGRAMMABLE FUNCTIONS Output Driver Impedance (34/48) Parameter 256M x16 512M x8 CAS Write Latency (9/10/11/12/14/16/18) A0-A14 A0-A14 Row Addressing Additive Latency (0/CL-1/CL-2) (x8 only) CS to Command Address (3/4/5/6/8) Column Addressing A0-A9 A0-A9 Burst Type (Sequential/Interleaved) Write Recovery Time (10/12/14/16/18/20/24) Bank Addressing BA0-BA1 BA0-BA1 Read Preamble (1T/2T) Write Preamble (1T/2T) Bank Groups BG0 BG0-BG1 Burst Length (BL8/BC4/BC4 or 8 on the fly) 2KB 1KB Page size Options tRFC 260ns 260ns Configuration : 256Mx16, 512Mx8 Package: - 96-ball BGA (7.5mm x 13.5mm, 0.8mm ball pitch) for x16 - 78-ball BGA (10.0mm x 14.0mm, 0.8mm ball pitch) for x8 Copyright 2021 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specication and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specication before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex- pected to cause failure of the life support system or to signicantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. C 08/24/2021 Long-term Support IS43/46QR85120B World Class Quality IS43/46QR16256B 1.1 DDR4 SDRAM package ball out 78-ball FBGA x8 (Top View) 1 2 3 4 5 6 7 8 9 DM, DBI A VDD VSSQ VSSQ VSS A TDQS TDQS B VPP VDDQ DQ1 VDDQ ZQ B DQS C VDDQ DQ0 DQS VDD VSS VDDQ C DQ5 D VSSQ DQ2 DQ3 VSSQ D DQ4 E VSS VDDQ VDDQ VSS E DQ6 DQ7 F VDD ODT CK VDD F NC CK G VSS NC CKE NC NC G CS CAS/ WE/ RAS/ H VDD VSS H ACT A14 A15 A16 A10/ A12/ J VREFCA BG0 BG1 VDD J AP BC K VSS BA0 A4 A3 BA1 VSS K L A6 A0 A1 A5 L RESET ALERT M VDD A8 A2 A9 A7 VPP M N VSS A11 PAR RFU A13 VDD N Integrated Silicon Solution, Inc. www.issi.com 2 Rev. C 08/24/2021