X-On Electronics has gained recognition as a prominent supplier of IS46TR16128A-125KBLA1 DRAM across the USA, India, Europe, Australia, and various other global locations. IS46TR16128A-125KBLA1 DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS46TR16128A-125KBLA1 ISSI

IS46TR16128A-125KBLA1 electronic component of ISSI
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Part No.IS46TR16128A-125KBLA1
Manufacturer: ISSI
Category: DRAM
Description: ISSI DRAM 2G, 1.5V, 1600MTs 128Mx16 DDR3 SDRAM
Datasheet: IS46TR16128A-125KBLA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
190: USD 11.176 ea
Line Total: USD 2123.44 
Availability - 0
MOQ: 190  Multiples: 190
Pack Size: 190
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 190
Multiples : 190
190 : USD 11.176
570 : USD 11.176
1140 : USD 11.121
2660 : USD 11.044
5130 : USD 10.736

   
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We are delighted to provide the IS46TR16128A-125KBLA1 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS46TR16128A-125KBLA1 and other electronic components in the DRAM category and beyond.

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IS43/46TR16128A/AL,IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES Standard Voltage: V and V = 1.5V 0.075V Refresh Interval: DD DDQ Low Voltage (L): V and V = 1.35V + 0.1V, -0.067V DD DDQ 7.8 us (8192 cycles/64 ms) Tc= -40C to 85C High speed data transfer rates with system 3.9 us (8192 cycles/32 ms) Tc= 85C to 105C frequency up to 933 MHz Partial Array Self Refresh 8 internal banks for concurrent operation Asynchronous RESET pin 8Bits pre-fetch architecture TDQS (Termination Data Strobe) supported (x8 Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and only) 11 OCD (Off-Chip Driver Impedance Adjustment) Programmable Additive Latency: 0, CL-1,CL-2 Dynamic ODT (On-Die Termination) Programmable CAS WRITE latency (CWL) based Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) on tCK Write Leveling Programmable Burst Length: 4 and 8 Operating temperature: Programmable Burst Sequence: Sequential or Commercial (T = 0C to +95C) C Interleave Industrial (T = -40C to +95C) C BL switch on the fly Automotive, A1 (T = -40C to +95C) C Auto Self Refresh(ASR) Automotive, A2 (T = -40C to +105C) C Self Refresh Temperature(SRT) ADDRESS TABLE OPTIONS Parameter 256Mx8 128Mx16 Configuration: Row Addressing A0-A14 A0-A13 256Mx8 Column Addressing A0-A9 A0-A9 128Mx16 Bank Addressing BA0-2 BA0-2 Package: Page size 1KB 2KB 96-ball FBGA (9mm x 13mm) for x16 Auto Precharge 78-ball FBGA (9mm x 10.5mm) for x8 A10/AP A10/AP Addressing BL switch on the fly A12/BC A12/BC SPEED BIN Speed Option 187F 15H 125K 107L Units JEDEC Speed Grade DDR3-1066F DDR3-1333H DDR3-1600K DDR3-1866L CL-nRCD-nRP 7-7-7 9-9-9 11-11-11 12-12-12 tCK tRCD,tRP(min) 13.125 13.125 13.125 12.84 ns Copyright2011IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytime withoutnotice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvised toobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts. IntegratedSiliconSolution,Inc.doesnotrecommendtheuseofanyofitsproductsinlifesupportapplicationswherethefailureormalfunctionoftheproduct canreasonablybeexpectedtocausefailureofthelifesupportsystemortosignificantlyaffectitssafetyoreffectiveness.Productsarenotauthorizedforuse insuchapplicationsunlessIntegratedSiliconSolution,Inc.receiveswrittenassurancetoitssatisfaction,that: a.)theriskofinjuryordamagehasbeenminimized b.)theuserassumeallsuchrisks and c.)potentialliabilityofIntegratedSiliconSolution,Incisadequatelyprotectedunderthecircumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. 00A 10/10/2011 IS43/46TR16128A/AL,IS43/46TR82560A/AL 1. DDR3 PACKAGE BALLOUT 1.1 DDR3 SDRAM package ballout 78-ball FBGA x8 1 2 3 4 5 6 7 8 9 A VSS VDD NC NU/TDQS VSS VDD B VSS VSSQ DQ0 DM/TDQS VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ 1 F NC VSS RAS CK VSS NC G ODT VDD CAS CK VDD CKE H NC CS WE A10/AP ZQ NC J VSS BA0 BA2 A15 VREFCA VSS K VDD A3 A0 A12/BC BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET A13 A14 A8 VSS Note: NC balls have no internal connection. NC/15 is one of NC pins and reserved for higher densities. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. 00A 10/10/2011

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8542.32.00 -- Memories
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Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
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