IS43/46TR16256B, IS43/46TR16256BL, IS43/46TR85120B, IS43/46TR85120BL 512Mx8, 256Mx16 4Gb DDR3 SDRAM NOVEMBER 2021 FEATURES Standard Voltage: V and V = 1.5V 0.075V DD DDQ Low Voltage (L): V and V = 1.35V + 0.1V, -0.067V DD DDQ - Backward compatible to 1.5V Partial Array Self Refresh High speed data transfer rates with system frequency up Asynchronous RESET pin to 1066 MHz TDQS (Termination Data Strobe) supported (x8 only) 8 internal banks for concurrent operation OCD (Off-Chip Driver Impedance Adjustment) 8n-Bit pre-fetch architecture Dynamic ODT (On-Die Termination) Programmable CAS Latency Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) Programmable Additive Latency: 0, CL-1,CL-2 Write Leveling Programmable CAS WRITE latency (CWL) based on tCK Up to 200MHz in DLL off mode Programmable Burst Length: 4 and 8 Operating temperature: Programmable Burst Sequence: Sequential or Interleave Commercial (T = 0C to +95C) C BL switch on the fly Industrial (T = -40C to +95C) C Auto Self Refresh(ASR) Automotive, A1 (TC = -40C to +95C) Self Refresh Temperature(SRT) Automotive, A2 (T = -40C to +105C) C Automotive, A25 (T = -40C to +115C) Refresh Interval: C Automotive, A3 (TC = -40C to +125C) 7.8 s (8192 cycles/64 ms) Tc= -40C to 85C 3.9 s (8192 cycles/32 ms) Tc= 85C to 105C 1.95 s (8192 cycles/16 ms) Tc= 105C to 115C 0.97 s (8192 cycles/8 ms) Tc= 115C to 125C ADDRESS TABLE Parameter 512Mx8 256Mx16 Row Addressing A0-A15 A0-A14 OPTIONS Column Addressing A0-A9 A0-A9 Configuration: 512Mx8, 256Mx16 Bank Addressing BA0-2 BA0-2 Package: Page size 1KB 2KB 96-ball BGA (9mm x 13mm) for x16 Auto Precharge 78-ball BGA (8mm x 10.5mm) for x8 A10/AP A10/AP Addressing BL switch on the fly A12/BC A12/BC SPEED BIN Speed Option 125K 107M 093N Units JEDEC Speed Grade DDR3-1600K DDR3-1866M DDR3-2133N CL-nRCD-nRP 11-11-11 13-13-13 14-14-14 tCK tRCD,tRP(min) 13.75 13.91 13.09 ns Note:Faster speed options are backward compatible to slower speed options. Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B2 11/02/2021 IS43/46TR16256B, IS43/46TR16256BL, IS43/46TR85120B, IS43/46TR85120BL 1. DDR3 PACKAGE BALLOUT 1.1 DDR3 SDRAM package ballout 78-ball BGA x8 1 2 3 4 5 6 7 8 9 A VSS VDD NC NU/TDQS VSS VDD B VSS VSSQ DQ0 DM/TDQS VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ 1 F NC VSS RAS CK VSS NC G ODT VDD CAS CK VDD CKE H NC CS WE A10/AP ZQ NC J VSS BA0 BA2 A15 VREFCA VSS K VDD A3 A0 A12/BC BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET A13 A14 A8 VSS Note: NC balls have no internal connection. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. B2 11/02/2021