IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES Standard Voltage: V and V = 1.5V 0.075V Refresh Interval: DD DDQ Low Voltage (L): V and V = 1.35V + 0.1V, -0.067V DD DDQ 7.8 us (8192 cycles/64 ms) Tc= -40C to 85C High speed data transfer rates with system 3.9 us (8192 cycles/32 ms) Tc= 85C to 105C frequency up to 933 MHz Partial Array Self Refresh 8 internal banks for concurrent operation Asynchronous RESET pin 8Bits pre-fetch architecture TDQS (Termination Data Strobe) supported (x8 Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and only) 11 OCD (Off-Chip Driver Impedance Adjustment) Programmable Additive Latency: 0, CL-1,CL-2 Dynamic ODT (On-Die Termination) Programmable CAS WRITE latency (CWL) based Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) on tCK Write Leveling Programmable Burst Length: 4 and 8 Operating temperature: Programmable Burst Sequence: Sequential or Commercial (T = 0C to +95C) C Interleave Industrial (T = -40C to +95C) C BL switch on the fly Automotive, A1 (T = -40C to +95C) C Auto Self Refresh(ASR) Automotive, A2 (T = -40C to +105C) C Self Refresh Temperature(SRT) OPTIONS ADDRESS TABLE Configuration: Parameter 128Mx8 64Mx16 128Mx8 Row Addressing A0-A13 A0-A12 64Mx16 Column Addressing A0-A9 A0-A9 Package: Bank Addressing BA0-2 BA0-2 96-ball FBGA (9mm x 13mm) for x16 Page size 1KB 2KB 78-ball FBGA (8mm x 10.5mm) for x8 Auto Precharge Addressing A10/AP A10/AP BL switch on the fly A12/BC A12/BC SPEED BIN Speed Option 187F 15G 15H 125J 125K 107K 107L Units DDR3- DDR3- DDR3- DDR3- DDR3- DDR3- DDR3- JEDEC Speed Grade 1066F 1333G 1333H 1600J 1600K 1866K 1866L CL-nRCD-nRP 7-7-7 8-8-8 9-9-9 10-10-10 11-11-11 11-11-11 12-12-12 tCK tRCD,tRP(min) 13.125 12.0 13.5 12.5 13.75 11.77 12.84 ns Note: Faster speed options are backward compatible to slower speed options. Copyright2011IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytime withoutnotice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvised toobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts. IntegratedSiliconSolution,Inc.doesnotrecommendtheuseofanyofitsproductsinlifesupportapplicationswherethefailureormalfunctionoftheproduct canreasonablybeexpectedtocausefailureofthelifesupportsystemortosignificantlyaffectitssafetyoreffectiveness.Productsarenotauthorizedforuse insuchapplicationsunlessIntegratedSiliconSolution,Inc.receiveswrittenassurancetoitssatisfaction,that: a.)theriskofinjuryordamagehasbeenminimized b.)theuserassumeallsuchrisks and c.)potentialliabilityofIntegratedSiliconSolution,Incisadequatelyprotectedunderthecircumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. 00A 12/12/2011 IS43/46TR16640A/AL, IS43/46TR81280A/AL 1. DDR3 PACKAGE BALLOUT 1.1 DDR3 SDRAM package ballout 78-ball FBGA x8 1 2 3 4 5 6 7 8 9 A VSS VDD NC NU/TDQS VSS VDD B VSS VSSQ DQ0 DM/TDQS VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ 1 F NC VSS RAS CK VSS NC G ODT VDD CAS CK VDD CKE H NC CS WE A10/AP ZQ NC J VSS BA0 BA2 A15 VREFCA VSS K VDD A3 A0 A12/BC BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET A13 NC/A14 A8 VSS Note: NC balls have no internal connection. NC/14 and NC/15 are one of NC pins and reserved for higher densities. 1.2 DDR3 SDRAM package ballout 96-ball FBGA x16 1 2 3 4 5 6 7 8 9 A VDDQ DQU5 DQU7 DQU4 VDDQ VSS B VSSQ VDD VSS DQSU DQU6 VSSQ C VDDQ DQU3 DQU1 DQSU DQU2 VDDQ D VSSQ VDDQ DMU DQU0 VSSQ VDD E VSS VSSQ DQL0 DML VSSQ VDDQ F VDDQ DQL2 DQSL DQL1 DQL3 VSSQ G VSSQ DQL6 DQSL VDD VSS VSSQ H VREFDQ VDDQ DQL4 DQL7 DQL5 VDDQ J NC VSS RAS CK VSS NC K ODT VDD CAS CK VDD CKE L NC CS WE A10/AP ZQ NC M VSS BA0 BA2 NC/A15 VREFCA VSS N VDD A3 A0 A12/BC BA1 VDD P VSS A5 A2 A1 A4 VSS R VDD A7 A9 A11 A6 VDD T VSS RESET NC/A13 NC/A14 A8 VSS Note: NC balls have no internal connection. NC/13, NC/14 and NC/15 are one of NC pins and reserved for higher densities. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. 00A 12/12/2011