X-On Electronics has gained recognition as a prominent supplier of IS46TR81024BL-107MBLA1 DRAM across the USA, India, Europe, Australia, and various other global locations. IS46TR81024BL-107MBLA1 DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS46TR81024BL-107MBLA1 ISSI

IS46TR81024BL-107MBLA1 electronic component of ISSI
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Part No.IS46TR81024BL-107MBLA1
Manufacturer: ISSI
Category: DRAM
Description: DRAM 8G 1Gx8 1866MT/s 1.35V DDR3L A-Temp
Datasheet: IS46TR81024BL-107MBLA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
136: USD 29.8543 ea
Line Total: USD 4060.18 
Availability - 0
MOQ: 136  Multiples: 136
Pack Size: 136
Availability Price Quantity
0
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 136
Multiples : 136
136 : USD 29.8543
272 : USD 29.8431

   
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We are delighted to provide the IS46TR81024BL-107MBLA1 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS46TR81024BL-107MBLA1 and other electronic components in the DRAM category and beyond.

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IS43/46TR16512B, IS43/46TR16512BL, IS43/46TR81024B, IS43/46TR81024BL 1Gx8, 512Mx16 8Gb DDR3 SDRAM JUNE 2021 FEATURES Standard Voltage: VDD and VDDQ = 1.5V 0.075V Refresh Interval: 7.8 s (8192 cycles/64 ms) Tc= -40C to 85C Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V 3.9 s (8192 cycles/32 ms) Tc= 85C to 95C - Backward compatible to 1.5V 1.95 s (8192 cycles/16 ms) Tc= 95C to 105C High speed data transfer rates with system 0.97 s (8192 cycles/8 ms) Tc= 105C to 115C frequency up to 933 MHz Partial Array Self Refresh 8 internal banks for concurrent operation Asynchronous RESET pin 8n-Bit pre-fetch architecture TDQS (Termination Data Strobe) supported (x8 Programmable CAS Latency only) Programmable Additive Latency: 0, CL-1,CL-2 OCD (Off-Chip Driver Impedance Adjustment) Programmable CAS WRITE latency (CWL) based Dynamic ODT (On-Die Termination) on tCK Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) Programmable Burst Length: 4 and 8 Write Leveling Programmable Burst Sequence: Sequential or Up to 200 MHz in DLL off mode Interleave Operating temperature: BL switch on the fly Commercial (TC = 0C to +95C) Auto Self Refresh(ASR) Industrial (T = -40C to +95C) C Self Refresh Temperature(SRT) Automotive, A1 (TC = -40C to +95C) Automotive, A2 (T = -40C to +105C) C Automotive, A25 (TC = -40C to +115C) OPTIONS ADDRESS TABLE Configuration: Parameter 1Gx8 512Mx16 1Gx8 Row Addressing A0-A15 A0-A15 512Mx16 Column Addressing A0-A9, A11 A0-A9 Package: Bank Addressing BA0-2 BA0-2 96-ball BGA (10mm x 14mm) for x16 Page size 2KB 2KB 78-ball BGA (10mm x 14mm) for x8 Auto Precharge A10/AP A10/AP Addressing BL switch on the fly A12/BC A12/BC SPEED BIN Speed Option 125K 107M 093N Units JEDEC Speed Grade DDR3-1600K DDR3-1866M DDR3-2133N CL-nRCD-nRP 11-11-11 13-13-13 14-14-14 tCK tRCD,tRP(min) 13.75 13.91 13.09 ns Note: Faster speed options are backward compatible to slower speed options. Copyright 2021 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B1 06/25/2021 IS43/46TR16512B, IS43/46TR16512BL, IS43/46TR81024B, IS43/46TR81024BL 1. DDR3 PACKAGE BALLOUT 1.1 DDR3 SDRAM package ballout 78-ball BGA x8 1 2 3 4 5 6 7 8 9 A VSS VDD NC NU/TDQS VSS VDD B VSS VSSQ DQ0 DM/TDQS VSSQ VDDQ C VDDQ DQ2 DQS DQ1 DQ3 VSSQ D VSSQ DQ6 DQS VDD VSS VSSQ E VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ 1 F NC VSS RAS CK VSS NC G ODT VDD CAS CK VDD CKE H NC CS WE A10/AP ZQ NC J VSS BA0 BA2 A15 VREFCA VSS K VDD A3 A0 A12/BC BA1 VDD L VSS A5 A2 A1 A4 VSS M VDD A7 A9 A11 A6 VDD N VSS RESET A13 A14 A8 VSS Note: NC balls have no internal connection. Integrated Silicon Solution, Inc. www.issi.com 2 Rev. B1 06/25/2021

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8542.32.00 -- Memories
               Monolithic integrated circuits:
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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