576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 IS49RL18320A-2 Meg x 18 x 16 Banks IS49RL 36160A1 Meg x 36 x 16 Banks Features Options 1200 MHz DDR operation (2400 Mb/s/ball t Clock cycle and RC timing data rate) t 0.83ns and RC (MIN) = 6.67ns (RL3-2400) for -083F Organization t 0.83ns and RC (MIN) = 7.5ns (RL3-2400) for -083E 32 Meg x 18, and 16 Meg x 36 common I/O (CIO) t 16 banks 0.93ns and RC (MIN) = 7.5ns (RL3-2133) for -093F t 0.93ns and RC (MIN) = 8.0ns (RL3-2133) for -093E 1.2V center-terminated push/pull I/O t 2.5V V , 1.35V V , 1.2V V (optional 1.35V V 1.07ns and RC (MIN) = 8.0ns (RL3-1866) for -107E EXT DD DDQ DDQ for 2400 operation only). t Reduced cycle time ( RC (MIN) = 6.67 - 8ns) SDR addressing - 32 Meg x 18 Programmable READ/WRITE latency (RL/WL) and - 16 Meg x 36 burst length Data mask for WRITE commands Operating Temperature Commercial (T = 0 to +95C) C Fr x, Industrial (T = 40C to +95C) C DKx ) and output data clocks (QKx, QK x ) Package On-die DLL generates CK edge-aligned data and 168-ball FBGA (Pb-free) 64ms refresh (128K refresh per 64ms) 40 or 60 matched impedance outputs Integrated on-die termination (ODT) Single or multibank writes Extended operating range (2001200 MHz) READ training register Multiplexed and non-multiplexed addressing capa- bilities Mirror function Output driver and ODT calibration Post Package Repar - 1 row per half bank JTAG interface (IEEE 1149.1-2001) Copyright 2021 Integrated Silicon Solu on, Inc. All rights reserved. ISSI reserves the right to make changes to this specica on and its products at any me without no ce. ISSI assumes no liability arising out of the applica on or use of any informa on, products or services described herein. Customers are advised to obtain the latest version of this device speci ca on before relying on any published informa on and before placing orders for prodsu.c t Integrated Silicon Solu on, Inc. does not recommend the use of any of its products in life support applica ons where the failure or malfunc on of the product can reasonably be expected to cause failure of the life support system or to signicantly aect its safety or eec veness. Products are not authorized for use in such applica ons unless Integrated Silicon Solu on, Inc. receives wri en assurance to its sa sfac on, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) poten al liability of Integrated Silicon Solu on, Inc is adequately protected under the circumstances RLDRAM is a registered trademark of Micron Technology, Inc. 1 www.issi.com Rev. A 06/14/2021576Mb: x18, x36 RLDRAM 3 Features Figure 1: 576Mb RLDRAM 3 Part Numbers Example Part Number: IS49RL18320A-093FBL - Die Gen. Temp IS49RL Speed Package Temperature None Commercial Meg x 18 18 0 Meg x 36 36 0 Industrial Die Gen Package 168-ball BGA (Pb-free), 135 boundary cells BL 168-ball BGA (Pb-free), 121 boundary cells B2L Speed Grade t t -083F CK = 0.83ns (6.67ns RC) t t -083E CK = 0.83ns (7.5ns RC) t t -093F CK = 0.93ns (7.5ns RC) t t -093E CK = 0.93ns (8ns RC) t t -107E CK = 1.07ns (8ns RC) 2 www.issi.com Rev. A 06/14/2021 NOT RELEASED