CPC7557NTR IXYS

CPC7557 Diode Bridge INTEGRATED CIRCUITS DIVISION Bridge Characteristics Description Parameter Rating Units The CPC7557N is an integrated diode bridge built on IXYS Integrated Circuits Divisions High Voltage SOI Reverse Voltage 100 V technology. mA Forward Current 240 rms Features Monolithic Construction Surface Mount Package Ordering Information Part Description Applications CPC7557N 8-Pin SOIC in Tubes (100/Tube) Telecommunications Protection Clamp CPC7557NTR 8-Pin SOIC Tape & Reel (2000/Reel) High Voltage Multiplexer/Switch Pb e3 CPC7557N Diagram A/B + B/A - DS-CPC7557-R04 www.ixysic.com 1CPC7557 INTEGRATED CIRCUITS DIVISION 1 Specifications 1.1 Package Pinout 1.2 Pin Description 1 8 Pin Name Description B - 1 Negative Bridge Output N/C N/C 2N/C No Connection 3N/C N/C N/C No Connection 4+ Positive Bridge Output A + 5A Input A 4 5 6N/C No Connection 7N/C No Connection 8B Input B 1.3 Absolute Maximum Ratings Unless Otherwise Specified all electrical ratings are at 25C Parameter Symbol Minimum Maximum Units V - 120 V Reverse Voltage RRM I - 250 mA Diode Forward Current (Average) F rms I -2 A Diode Forward Surge Current FSM 2 2 -0.02 Fusing Current I t A s -- 3 kV ESD, Human Body Model 1 T -+150 C J Junction Temperature T -65 +150 C Storage Temperature STG 1 Derate package for P 120C/W. DISS Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. R04 www.ixysic.com 2