DHH55-36N1F IXYS

DHH55-36N1F V = 2x1800 V RRM Sonic Fast Recovery Diode I = 60 A FAV t = 230 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number DHH55-36N1F Backside: Isolated 1 3 5 Features / Advantages: Applications: Package: i4-Pac Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Very low leakage current switching devices Industry convenient outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Soldering pins for PCB mounting Very soft recovery behaviour Rectifiers in switch mode power Backside: DCB ceramic Avalanche voltage rated for reliable supplies (SMPS) Reduced weight operation Uninterruptible power supplies (UPS) Advanced power cycling Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e 2020 IXYS all rights reservedDHH55-36N1F Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 1800 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1800 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 1 8 0 0 V T = 25C 200 A R R VJ V = 1 8 0 0 V T = 1 2 5 C 2 mA R VJ forward voltage drop V I = 6 0 A T = 25C 2.04 V F F VJ I = 1 2 0 A 2.57 V F T = C 2.03 V I = 6 0 A 125 F VJ I = 1 2 0 A 2.73 V F average forward current T = 5 0 C T = 1 5 0 C 60 A I FAV C VJ rectangular d = 0.5 V T = 1 5 0 C 1.28 V threshold voltage F0 VJ for power loss calculation only slope resistance r 12 m F thermal resistance junction to case 0.6 K/W R thJC thermal resistance case to heatsink K/W R 0.2 thCH P total power dissipation T = 25C 210 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 700 A I R FSM VJ junction capacitance V = 1 2 0 0 V f = 1 MHz T = 25C 28 pF C J R VJ I max. reverse recovery current T = 25 C 60 A RM VJ I = 60 A V = 1200 V T = 100C 70 A F R VJ reverse recovery time -di /dt = 800 A/s T = 25 C 230 ns t F rr VJ T = 100C 350 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211e 2020 IXYS all rights reserved