DLA100B800LB 3~ 1~ High Efficiency Standard Rectifier Rectifier V = 800 V RRM I 124 A = DAV A I = 400 FSM 1~ Rectifier Bridge Part number DLA100B800LB Marking on Product: DLA100B800LB Backside: isolated 8 = n/c 4 5 6 9 7 1 2 3 Features / Advantages: Applications: Package: SMPD Planar passivated chips Diode Bridge for main rectification Isolation Voltage: V~ 3000 Very low leakage current Industry convenient outline Very low forward voltage drop RoHS compliant Improved thermal behaviour Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b 2019 IXYS all rights reservedDLA100B800LB Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 800 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 8 0 0 V T = 25C 10 A R VJ R V = 8 0 0 V T = 1 5 0 C 0.1 mA R VJ forward voltage drop V I = 5 0 A T = 25C 1.23 V F F VJ I = 1 0 0 A 1.45 V F T = C 1.15 V I = 5 0 A 150 F VJ I = 1 0 0 A 1.44 V F bridge output current T = 1 3 5 C T = 1 7 5 C 124 A I DAV C VJ 180 sine V T = 1 7 5 C 0.75 V threshold voltage F0 VJ for power loss calculation only slope resistance r 4.2 m F thermal resistance junction to case 1 K/W R thJC thermal resistance case to heatsink K/W R 0.40 thCH P total power dissipation T = 25C 150 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 400 A I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 430 A R t = 10 ms (50 Hz), sine T = 1 5 0 C A 340 VJ t = 8,3 ms (60 Hz), sine V = 0 V 365 A R value for fusing It t = 10 ms (50 Hz), sine T = 45C 800 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 770 As R t = 10 ms (50 Hz), sine T = 1 5 0 C 580 As VJ t = 8,3 ms (60 Hz), sine V = 0 V 555 As R V = 4 0 0 V f = 1 MHz T = 25C 13 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b 2019 IXYS all rights reserved