DPF240X200NA IXYS

DPF240X200NA preliminary V= 200V RRM HiPerFRED I= 2x 120A FAV tn= 55s rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X200NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Antiparallel diode for high frequency Isolation Voltage: V~ 3000 Very low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode RoHS compliant Improved thermal behaviour Snubber diode Epoxy meets UL 94V-0 Very low Irm-values Free wheeling diode Base plate: Copper Very soft recovery behaviour Rectifiers in switch mode power internally DCB isolated Avalanche voltage rated for reliable operation supplies (SMPS) Advanced power cycling Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a 2013 IXYS all rights reservedDPF240X200NA preliminary Ratings Fast Diode Conditions Symbol Definition min. typ. max. Unit V T = 25C 200 V max. non-repetitive reverse blocking voltage RSM VJ V T = 25C 200 V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = V200 T = 25C 10 A R R VJ V = V200 T = C150 0.5 mA R VJ forward voltage drop V I = A120 T = 25C 1.19 V F F VJ 1.51 V I = A240 F I = A120 T = C150 1.06 V F VJ I = A240 1.48 V F average forward current T = C80 T = C150 120 A I FAV C VJ rectangular d = 0.5 V threshold voltage T = C150 0.65 V F0 VJ for power loss calculation only slope resistance r 3.4 m F thermal resistance junction to case R 0.4 K/W thJC thermal resistance case to heatsink R 0.10 K/W thCH P total power dissipation T = 25C 310 W tot C max. forward surge current I t = 10 ms (50 Hz), sine V = 0 V T = 45C 1.20 kA R FSM VJ junction capacitance C V = V100 f = 1 MHz T = 25C 328 pF J R VJ I max. reverse recovery current T=25C 6 A RM VJ I=A120 V=V100 T=125C 16 A F R VJ reverse recovery time t -di /dt=A200/s T=25C 55 ns F rr VJ T=125C 85 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a 2013 IXYS all rights reserved