DPF80C200HB IXYS

DPF80C200HB preliminary V = 200 V RRM HiPerFRED I = 2x 40 A FAV t = 55 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPF80C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Antiparallel diode for high frequency Industry standard outline Very low leakage current switching devices RoHS compliant Very short recovery time Antisaturation diode Epoxy meets UL 94V-0 Improved thermal behaviour Snubber diode Very low Irm-values Free wheeling diode Very soft recovery behaviour Rectifiers in switch mode power Avalanche voltage rated for reliable operation supplies (SMPS) Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b 2020 IXYS all rights reservedDPF80C200HB preliminary Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 2 0 0 V T = 25C 1 A R R VJ V = 2 0 0 V T = 1 5 0 C 0.2 mA R VJ forward voltage drop V I = 4 0 A T = 25C 1.22 V F F VJ I = 8 0 A 1.45 V F T = C 0.95 V I = 4 0 A 150 F VJ I = 8 0 A 1.20 V F average forward current T = 1 4 5 C T = 1 7 5 C 40 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.67 V threshold voltage F0 VJ for power loss calculation only slope resistance r 5.8 m F thermal resistance junction to case 0.7 K/W R thJC thermal resistance case to heatsink K/W R 0.3 thCH P total power dissipation T = 25C 215 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 560 A I R FSM VJ junction capacitance V = 1 0 0 V f = 1 MHz T = 25C 81 pF C J R VJ I max. reverse recovery current T = 25 C 6 A RM VJ I = 40 A V = 100 V T = 125C 11 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 55 ns t rr F VJ T = 125C 85 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b 2020 IXYS all rights reserved