X-On Electronics has gained recognition as a prominent supplier of DPG10I200PA Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. DPG10I200PA Small Signal Switching Diodes are a product manufactured by IXYS. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

DPG10I200PA IXYS

DPG10I200PA electronic component of IXYS
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Part No.DPG10I200PA
Manufacturer: IXYS
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 10 Amps 200V
Datasheet: DPG10I200PA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.212 ea
Line Total: USD 2.21 
Availability - 184
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
184
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.212
10 : USD 1.876
13 : USD 1.386
34 : USD 1.316
500 : USD 1.274

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DPG10I200PA from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DPG10I200PA and other electronic components in the Small Signal Switching Diodes category and beyond.

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DPG10I200PA V = 200 V RRM HiPerFRED I = 10 A FAV t = 35 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10I200PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 Planar passivated chips Antiparallel diode for high frequency Industry standard outline Very low leakage current switching devices RoHS compliant Very short recovery time Antisaturation diode Epoxy meets UL 94V-0 Improved thermal behaviour Snubber diode Very low Irm-values Free wheeling diode Very soft recovery behaviour Rectifiers in switch mode power Avalanche voltage rated for reliable operation supplies (SMPS) Soft reverse recovery for low EMI/RFI Uninterruptible power supplies (UPS) Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b 2020 IXYS all rights reservedDPG10I200PA Ratings Fast Diode Symbol Definition Conditions min. typ. max. Unit T = 25C 200 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 200 V V max. repetitive reverse blocking voltage RRM VJ reverse current, drain current I V = 2 0 0 V T = 25C 1 A R R VJ V = 2 0 0 V T = 1 5 0 C 0.06 mA R VJ forward voltage drop V I = 1 0 A T = 25C 1.27 V F F VJ I = 2 0 A 1.45 V F T = C 0.98 V I = 1 0 A 150 F VJ I = 2 0 A 1.17 V F average forward current T = 1 5 0 C T = 1 7 5 C 10 A I FAV C VJ rectangular d = 0.5 V T = 1 7 5 C 0.74 V threshold voltage F0 VJ for power loss calculation only slope resistance r 17.7 m F thermal resistance junction to case 2.3 K/W R thJC thermal resistance case to heatsink K/W R 0.5 thCH P total power dissipation T = 25C 65 W tot C max. forward surge current t = 10 ms (50 Hz), sine V = 0 V T = 45C 140 A I R FSM VJ junction capacitance V = 1 5 0 V f = 1 MHz T = 25C 15 pF C J R VJ I max. reverse recovery current T = 25 C 3 A RM VJ I = 10 A V = 130 V T = 125C 5.5 A F R VJ reverse recovery time -di /dt = 200A/s T = 25 C 35 ns t rr F VJ T = 125C 45 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b 2020 IXYS all rights reserved

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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