DSEI 19-06AS V = 600 V Fast Recovery RRM I = 20 A FAVM Epitaxial Diode (FRED) t = 35 ns rr AC TO-263 AA V V Type RSM RRM V V NC A 600 600 DSEI 19-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol Conditions Maximum Ratings Features International standard surface mount I T = T 25 A FRMS VJ VJM package JEDEC TO-263 AA I T = 65C rectangular, d = 0.5 20 A FAVM C Planar passivated chips I t < 10 s rep. rating, pulse width limited by T 150 A FRM P VJM Very short recovery time I T = 45C t = 10 ms (50 Hz), sine 100 A FSM VJ Extremely low switching losses t = 8.3 ms (60 Hz), sine 110 A Low I -values RM Soft recovery behaviour T = 150C t = 10 ms (50 Hz), sine 85 A VJ Epoxy meets UL 94V-0 t = 8.3 ms (60 Hz), sine 95 A 2 2 TO-263 AA Outline I t T = 45C t = 10 ms (50 Hz), sine 50 A s VJ 2 t = 8.3 ms (60 Hz), sine 50 A s 2 T = 150C t = 10 ms (50 Hz), sine 36 A s VJ 2 t = 8.3 ms (60 Hz), sine 37 A s T -40...+150 C VJ T 150 C VJM T -40...+150 C stg P T = 25C 61 W tot C Weight 2g Symbol Conditions Characteristic Values typ. max. I T = 25C V = V 50 A R VJ R RRM T = 25C V = 0.8 V 25 A VJ R RRM T = 125C V = 0.8 V 3mA VJ R RRM V I = 16 A T = 150C 1.5 V F F VJ T = 25C 1.7 V Dim. Millimeter Inches VJ Min. Max. Min. Max. V For power-loss calculations only 1.12 V T0 A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 r T = T 23.2 m T VJ VJM b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 R 2 K/W thJC c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 t I = 1 A -di/dt = 50 A/s V = 30 V T = 25C 35 50 ns rr F R VJ D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 I V = 350 V I = 12 A -di /dt = 100 A/s 4 4.4 A RM R F F E 9.65 10.29 .380 .405 L 0.05 H T = 100C VJ E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC I rating includes reverse blocking losses at T , V = 0.8 V , duty cycle d = 0.5 FAVM VJM R RRM L 14.61 15.88 .575 .625 Data according to IEC 60747 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions and dimensions 2004 IXYS All rights reserved 1 - 2 417DSEI 19-06AS Fig. 1 Forward current Fig. 2 Recovery charge versus -di /dt. Fig. 3 Peak reverse current versus F versus voltage drop. -di /dt. F Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -di /dt. Fig. 6 Peak forward voltage F junction temperature. versus di /dt. F Fig. 7 Transient thermal impedance junction to case. IXYS reserves the right to change limits, test conditions and dimensions 2004 IXYS All rights reserved 2 - 2 417