IXA20I1200PZ-TUB IXYS

IXA20I1200PZ V = 1200 V CES XPT IGBT I = 38 A C25 V = 1.8 V CE(sat) Single IGBT Part number IXA20I1200PZ Backside: collector (C) 2 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT design (Xtreme light Punch Through) Medical equipment Epoxy meets UL 94V-0 results in: Uninterruptible power supply - short circuit rated for 10 sec. Air-conditioning systems - very low gate charge Welding equipment - low EMI Switched-mode and resonant-mode - square RBSOA 3x Ic power supplies Thin wafer technology combined with the XPT design Inductive heating, cookers results in a competitive low VCE(sat) Pumps, Fans Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments - the conclusion of quality agreements - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20170606b 2017 IXYS all rights reservedIXA20I1200PZ Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage T = 25C 1200 V V VJ CES max. DC gate voltage 20 V V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 38 A C C25 T = 8 0 C 22 A I C C80 total power dissipation T = 25C 165 W P tot C collector emitter saturation voltage V I = 1 5 A V = 15 V T = 25C 1.8 2.1 V CE(sat) C GE VJ 125 T = C 2.1 V VJ gate emitter threshold voltage I = 0 . 6 mA V = V T = 25C 5.4 5.9 6.5 V V VJ GE(th) C GE CE collector emitter leakage current V = V V = 0 V T = 25C 0.1 mA I CES CE CES GE VJ 125 T = C 0.1 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge V = 6 0 0 V V = 15 V I = 1 5 A 47 nC Q G(on) CE GE C turn-on delay time 48 ns t d(on) current rise time t 30 ns r inductive load T = 1 2 5 C VJ turn-off delay time t 230 ns d(off) V = 6 0 0 V I = 1 5 A CE C current fall time 350 ns t f V = 15 V R = 5 6 GE G turn-on energy per pulse 1.6 mJ E on turn-off energy per pulse E 1.7 mJ off reverse bias safe operating area RBSOA V = 15 V R = 5 6 T = 1 2 5 C GE G VJ A V = 1 2 0 0 V 45 I CM CEmax short circuit safe operating area V = 1 2 0 0 V SCSOA CEmax short circuit duration t V = 9 0 0 V V = 15 V T = 1 2 5 C 10 s SC CE GE VJ short circuit current I R = 5 6 non-repetitive 60 A SC G thermal resistance junction to case 0.76 K/W R thJC thermal resistance case to heatsink K/W R 0.25 thCH Diode max. repetitive reverse voltage T = 25C 1200 V V VJ RRM forward current T = 25C tbd A I C F25 I T = 8 0 C tbd A C F80 forward voltage V I = A T = 25C tbd V VJ F F T = 125C tbd V VJ reverse current V = V T = 25C * mA I R R RRM VJ * not applicable, see Ices at IGBT T = 125C * mA VJ reverse recovery charge Q tbd C rr V = 600 V R max. reverse recovery current tbd A I RM -di /dt = A/s T = 125C F VJ reverse recovery time tbd ns t rr I = A V = 0 V F GE reverse recovery energy E tbd mJ rec thermal resistance junction to case R tbd K/W thJC thermal resistance case to heatsink K/W R thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20170606b 2017 IXYS all rights reserved