IXA30PG1200DHGLB IXYS

Isolated surface to heatsink Advanced Technical Information IXA 30PG1200DHGLB I = 43 A C25 XPT IGBT phaseleg V = 1200 V ISOPLUS CES V = 1.9 V Surface Mount Power Device CE(sat) typ 7 D3 6 D1 S1 4 5 D4 9 1 D2 S2 3 E72873 2 8 Features IGBTs S1, S2 XPT IGBT Symbol Conditions Maximum Ratings - low saturation voltage V T = 25C to 150C 1200 V - positive temperature coefficient for CES VJ easy paralleling V 20 V GES - fast switching I T = 25C 43 A C25 C - short tail current for optimized I T = 80C 30 A C80 C performance in resonant circuits Sonic diode I V = 15 V R = 39 W T = 125C 75 A CM GE G VJ - fast reverse recovery V RBSOA, clamped inductive load L = 100 H V CEK CES - low operating forward voltage t V = 900 V V = 15 V R = 39 W T = 125C 10 s SC CE GE G VJ - low leakage current (SCSOA) none repetitive V detection diode CEsat P T = 25C 150 W - integrated into package tot C - very fast diode Package Symbol Conditions Characteristic - isolated back surface Values - low coupling capacity between pins (T = 25C, unless otherwise specified) and heatsink VJ - PCB space saving min. typ. max. - enlarged creepage towards heatsink V I = 25 A V = 15 V T = 25C 1.9 2.2 V CE(sat) C GE VJ - application friendly pinout T = 125C 2.2 V - low inductive current path VJ - high reliability V I = 1 mA V = V 5.4 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 2.1 mA CES CE CES GE VJ Applications T = 125C 200 A VJ Phaseleg I V = 0 V V = 20 V 500 nA GES CE GE - buck-boost chopper t 70 ns Full bridge d(on) t 40 ns - power supplies r t Inductive load T = 125C 250 ns - induction heating d(off) VJ t V = 600 V I = 25 A 100 ns - four quadrant DC drives f CE C E V = 15 V R = 39 W 2.5 mJ - controlled rectifier on GE G E 3.0 mJ Three phase bridge off E tbd - AC drives (rec)off - controlled rectifier C V = 25 V V = 0 V f = 1 MHz tbd pF ies CE GE Q V = 600 V V = 15 V I = 25 A 76 nC Gon CE GE C R 0.85 K/W thJC R with heatsink compound (IXYS test setup) 0.95 1.3 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20120131b 2012 IXYS All rights reserved 1 - 5 9 8 7 6 5 4 3 2 1Advanced Technical Information IXA 30PG1200DHGLB Diodes D1, D2 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 40 A F25 C I T = 80C 27 A F80 C I R 0 Symbol Conditions Characteristic Values V 0 (T = 25C, unless otherwise specified) VJ min. typ. max. IGBTs (typ. at V = 15 V T = 125C) GE J V I = 20 A T = 25C 1.9 2.4 V F F VJ S1, S2 V = 1.1 V R = 60 mW 0 0 T = 125C 1.9 V VJ I 30 A RM I = 20 A R = 39 W T = 125C F G VJ t 350 ns Diodes (typ. at T = 125C) rr J V = 600 V V = -15 V R GE E 0.85 mJ D1, D2 V = 1.3 V R = 28 mW rec 0 0 R per diode 0.9 K/W thJC R with heatsink compound (IXYS test setup) 1.2 1.5 K/W thJH Diodes D3, D4 Symbol Conditions Maximum Ratings V T = 25C to 150C 1200 V R C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V I = 1 A T = 25C 1.7 2.2 V F F VJ T = 125C 1.5 V VJ I V = 1200 V T = 25C 2 A R R VJ T = 125C 30 A VJ I I = 1 A di /dt = -100 A/s T = 25C 2.3 A RM F F VJ t V = 100 V V = 0 V 40 ns rr R GE Component Symbol Conditions Maximum Ratings T -55...+150 C VJ T -55...+125 C stg V I < 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force 40 ... 130 N C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted 90 pF P pins and backside metal d d pin - pin 1.65 mm S, A d d pin - backside metal 4 mm S, A CTI 400 Weight 8 g Delivering Base Ordering Ordering Ordering Name Marking on Product Mode Qty Code Standard IXA30PG1200DHGLB-TRR IXA30PG1200DHGLB Tape&Reel 200 511846 IXYS reserves the right to change limits, test conditions and dimensions. 20120131b 2012 IXYS All rights reserved 2 - 5