IXA37IF1200HJ IXYS

IXA37IF1200HJ V= 1200V CES XPT IGBT I= 58A C25 VV= 1.8 CE(sat) Copack Part number IXA37IF1200HJ Backside: isolated 2(C) (G) 1 3(E) Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature AC motor drives Isolation Voltage: V~ 3600 coefficient of the on-state voltage Solar inverter Industry standard outline Rugged XPT design (Xtreme light Punch Through) Medical equipment RoHS compliant results in: Uninterruptible power supply Epoxy meets UL 94V-0 - short circuit rated for 10 sec. Air-conditioning systems Soldering pins for PCB mounting - very low gate charge Welding equipment Backside: DCB ceramic - low EMI Switched-mode and resonant-mode Reduced weight - square RBSOA 3x Ic power supplies Advanced power cycling Thin wafer technology combined with the XPT design Inductive heating, cookers results in a competitive low VCE(sat) Pumps, Fans SONIC diode - fast and soft reverse recovery - low operating forward voltage IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20100623c 2010 IXYS all rights reservedIXA37IF1200HJ Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V VJ CES max. DC gate voltage V 20 V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 58 A C25 C I T = 80 C 37 A C C80 total power dissipation P T = 25C 195 W tot C collector emitter saturation voltage V I = A V = 15 V35 T = 25C 1.8 2.1 V CE(sat) CGE VJ T = 125 C 2.1 V VJ gate emitter threshold voltage V I = 1.5 mA V = V T = 25C 5.4 5.9 6.5 V VJ GE(th) CGECE collector emitter leakage current I V = V V = 0 V T = 25C 0.1 mA CES CE CES GE VJ T = 125 C 0.1 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 60 0 V V = 15 V I = 35 A 106 nC G(on) CE GE C turn-on delay time t 70 ns d(on) current rise time t 40 ns r inductive load T = 125 C VJ turn-off delay time t 250 ns d(off) V = 600 V I = 35 A CE C current fall time t 100 ns f V = 15 V R = 27 GE G turn-on energy per pulse E 3.8 mJ on turn-off energy per pulse E 4.1 mJ off reverse bias safe operating area RBSOA V = 15 V R = 27 T = 125 C GE G VJ A I V = 1200 V 105 CM CEmax short circuit safe operating area SCSOA V = 900 V CEmax short circuit duration t SC V = 900 V V = 15 V T = 125 C 10 s CE GE VJ short circuit current I R = 27 non-repetitive 140 A SC G thermal resistance junction to case R 0.64 K/W thJC thermal resistance case to heatsink K/W R 0.25 thCH Diode max. repetitive reverse voltage V T = 25C 1200 V VJ RRM forward current A I T = 25C 42 F25 C I T = 80 C 25 A F 80 C forward voltage V I = 30 A T = 25C 2.20 V F F VJ T = 125C 1.95 V VJ reverse current V = V mA I T = 25C * R R RRM VJ * not applicable, see Ices value above T = 125C * mA VJ reverse recovery charge Q 3.5 C rr V = 600 V R max. reverse recovery current I 30 A RM -di /dt = -60 0 A/s T = 125C F VJ reverse recovery time t 350 ns rr I = 30 A V = 0 V FGE reverse recovery energy E 0.9 mJ rec thermal resistance junction to case R 1.2 K/W thJC thermal resistance case to heatsink R K/W 0.25 thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20100623c 2010 IXYS all rights reserved