IXA4I1200UC IXYS

IXA4I1200UC preliminary V= 1200V CES XPT IGBT I= 9A C25 VV= 1.8 CE(sat) Single IGBT Part number IXA4I1200UC Marking on Product: X4TAU Backside: collector (C) 2+4 (G) 1 (E) 3 Features / Advantages: Applications: Package: TO-252 (DPak) Easy paralleling due to the positive temperature AC motor drives Industry standard outline coefficient of the on-state voltage Solar inverter RoHS compliant Rugged XPT design (Xtreme light Punch Through) Medical equipment Epoxy meets UL 94V-0 results in: Uninterruptible power supply - short circuit rated for 10 sec. Air-conditioning systems - very low gate charge Welding equipment - low EMI Switched-mode and resonant-mode - square RBSOA @ 3x Ic power supplies Thin wafer technology combined with the XPT design Inductive heating, cookers results in a competitive low VCE(sat) Pumps, Fans IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120917 2012 IXYS all rights reservedIXA4I1200UC preliminary Ratings IGBT Symbol Definition Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V VJ CES max. DC gate voltage V 20 V GES max. transient gate emitter voltage V 30 V GEM collector current I T = 25C 9 A C25 C I T = 100 C 5 A C C100 total power dissipation P T = 25C 45 W tot C collector emitter saturation voltage V I = A; V = 15 V3 T = 25C 1.8 2.1 V CE(sat) CGE VJ T = 125 C 2.1 V VJ gate emitter threshold voltage V I = 0.1 mA; V = V T = 25C 5.4 5.9 6.5 V VJ GE(th) CGECE collector emitter leakage current I V = V ; V = 0 V T = 25C 0.1 mA CES CE CES GE VJ T = 125 C 0.1 mA VJ gate emitter leakage current I V = 20 V 500 nA GES GE total gate charge Q V = 60 0 V; V = 15 V; I = 3 A 12 nC G(on) CE GE C turn-on delay time t 70 ns d(on) current rise time t 40 ns r inductive load T = 125 C VJ turn-off delay time t 250 ns d(off) V = 600 V; I = 3 A CE C current fall time t 100 ns f V = 15 V; R = 33 0 GE G turn-on energy per pulse E 0.4 mJ on turn-off energy per pulse E 0.3 mJ off reverse bias safe operating area RBSOA V = 15 V; R = 33 0 T = 125 C GE G VJ A I V = 1200 V 9 CM CEmax short circuit safe operating area SCSOA V = 900 V CEmax short circuit duration t SC V = 900 V; V = 15 V T = 125 C 10 s CE GE VJ short circuit current I R = 330 ; non-repetitive 12 A SC G thermal resistance junction to case R 2.7 K/W thJC thermal resistance case to heatsink K/W R 0.50 thCH Diode max. repetitive reverse voltage V T = 25C 1200 V VJ RRM forward current A I T = 25C tbd F25 C I T = 10 0C tbd A F 100 C forward voltage V I = 3 A T = 25C tbd V F F VJ T = 125C tbd V VJ reverse current V = V mA I T = 25C * R R RRM VJ * not applicable, see Ices value above T = 125C * mA VJ reverse recovery charge Q tbd C rr V = 600 V R max. reverse recovery current I tbd A RM -di /dt = A/s T = 125C F VJ reverse recovery time t tbd ns rr I = 3 A; V = 0 V FGE reverse recovery energy E tbd mJ rec thermal resistance junction to case R tbd K/W thJC thermal resistance case to heatsink R K/W thCH IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20120917 2012 IXYS all rights reserved