Preliminary Technical Information High Voltage, V = 3600V IXBF20N360 CES High Frequency, I = 18A TM C110 BiMOSFET Monolithic V 3.4V Bipolar MOS Transistor CE(sat) (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3600 V CES J V T = 25C to 150C, R = 1M 3600 V CGR J GE 1 2 V Continuous 20 V GES Isolated Tab 5 V Transient 30 V GEM I T = 25C 45 A 1 = Gate 5 = Collector C25 C 2 = Emitter I T = 110C 18 A C110 C I T = 25C, 1ms 220 A CM C SSOA V = 15V, T = 125C, R = 10 I = 160 A GE VJ G CM (RBSOA) Clamped Inductive Load V 1500 V CES Features T V = 15V, T = 125C, SC GE J (SCSOA) R = 52 , V = 1500V, Non-Repetitive 10 s G CE Silicon Chip on Direct-Copper Bond P T = 25C 230 W C C (DCB) Substrate T -55 ... +150 C Isolated Mounting Surface J 4000V~ Electrical Isolation T 150 C JM High Blocking Voltage T -55 ... +150 C stg High Frequency Operation T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Advantages F Mounting Force with Clip 20..120 / 4.5..27 N/lb C V 50/60Hz, 5 Seconds 4000 V~ ISOL Low Gate Drive Requirement High Power Density Weight 8 g Applications Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV I = 250A, V = 0V 3600 V Power Supplies CES C GE Uninterruptible Power Supplies V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE (UPS) I V = 3000V, V = 0V 25 A CES CE GE Laser Generators Note 2, T = 125C 125 A J Capacitor Discharge Circuits I V = 0V, V = 20V 200 nA GES CE GE AC Switches V I = 20A, V = 15V, Note 1 2.9 3.4 V CE(SAT) C GE T = 125C 3.6 V J 2013 IXYS CORPORATION, All Rights Reserved DS100567A(12/13) IXBF20N360 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 10 17 S fs C CE C 2045 pF ies C V = 25V, V = 0V, f = 1MHz 110 pF oes CE GE C 50 pF res Q 110 nC g(on) Q I = 20A, V = 15V, V = 1000V 13 nC ge C GE CE Q 43 nC gc t 18 ns d(on) t 14 ns Inductive load, T = 25C ri J E 15.50 mJ I = 20A, V = 15V Pin 1 = Gate on C GE Pin2 = Emitter Pin 3 = Collector t 238 ns V = 1500V, R = 10 Tab 4 = Isolated d(off) CE G t 206 ns fi Note 3 E 4.30 mJ f of t 20 ns d(on) t 22 ns Inductive load, T = 125C ri J E 16.10 mJ I = 20A, V = 15V on C GE t V = 1500V, R = 10 247 ns d(off) CE G t 216 ns fi Note 3 E 4.15 mJ off t 30 ns d(on) Resistive load, T = 25C J t 325 ns r I = 20A, V = 15V C GE t 165 ns d(off) V = 960V, R = 10 CE G t 1045 ns f t 32 ns d(on) Resistive load, T = 125C J t 890 ns r I = 20A, V = 15V C GE t 185 ns d(off) V = 960V, R = 10 CE G t 1100 ns f R 0.54 C/W thJC R 0.15 C/W thCS PRELIMANARY TECHNICAL Reverse Diode INFORMATION Symbol Test Conditions Characteristic Values The product presented herein is under (T = 25C Unless Otherwise Specified) Min. Typ. Max J development. The Technical Specifica- tions offered are derived from a subjec- V I = 20A, V = 0V, Note 1 3.5 V F F GE tive evaluation of the design, based upon prior knowledge and experience, and t 1.7 s rr I = 10A, V = 0V, -di /dt = 100A/s constitute aconsidered reflectio of the F GE F I 35 A anticipated result. IXYS reserves the RM V = 100V, V = 0V R GE right to change limits, test conditions, and Q 30 C RM dimensions without notice. Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 3. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537