Preliminary Technical Information High Voltage, High Gain V = 3000V IXBF32N300 CES TM BIMOSFET Monolithic I = 22A C90 Bipolar MOS Transistor V 3.2V CE(sat) (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3000 V CES C 1 V T = 25C to 150C, R = 1M 3000 V CGR J GE 2 V Continuous 20 V GES 5 V Transient 30 V ISOLATED TAB GEM I T = 25C 40 A C25 C I T = 90C 22 A C90 C 1 = Gate 5 = Collector 2 = Emitter I T = 25C, 1ms 250 A CM C SSOA V = 15V, T = 125C, R = 10 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V 2400 V CES P T = 25C 160 W Features C C T -55 ... +150 C J z Silicon Chip on Direct-Copper Bond T 150 C JM (DCB) Substrate T -55 ... +150 C z stg Isolated Mounting Surface z 3000V Electrical Isolation T 1.6mm (0.062 in.) from Case for 10s 300 C L z T Plastic Body for 10 seconds 260 C High Blocking Voltage SOLD z International Standard Package F Mounting Force 20..120 / 4.5..27 Nm/lb.in. C z Low Conduction Losses V 50/60Hz, 1 Minute 3000 V ISOL Weight 5 g Advantages z Low Gate Drive Requirement z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. Applications: J BV I = 250A, V = 0V 3000 V CES C GE z Switched-Mode and Resonant-Mode V I = 250A, V = V 2.5 5.0 V Power Supplies GE(th) C CE GE z Uninterruptible Power Supplies (UPS) I V = 0.8 V V = 0V 50 A CES CE CES, GE z Laser Generators T = 125C 2 mA J z Capacitor Discharge Circuits I V = 0V, V = 20V 100 nA GES CE GE z AC Switches V I = 32A, V = 15V, Note 1 2.8 3.2 V CE(sat) C GE T = 125C 3.5 V J 2009 IXYS CORPORATION, All Rights Reserved DS100119(02/09) IXBF32N300 TM Symbol Test Conditions Characteristic Values ISOPLUS i4-Pak (HV) (IXBF) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 32A, V = 10V, Note 1 16 26 S fS C CE C 3140 pF ies C V = 25V, V = 0V, f = 1MHz 124 pF oes CE GE C 40 pF res Q 142 nC g Q I = 32A, V = 15V, V = 1000V 20 nC ge C GE CE Q 57 nC gc t 50 ns d(on) Resistive Switching Times, T = 25C J t 185 ns r I = 32A, V = 15V C GE t 160 ns d(off) V = 1250V, R = 2 CE G t 720 ns f t 58 ns d(on) Resistive Switching Times, T = 125C J t 515 ns r I = 32A, V = 15V C GE t 165 ns d(off) V = 1250V, R = 2 CE G t 630 ns f R 0.78 C/W thJC R 0.15 C/W thCS Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 32A, V = 0V 2.1 V F F GE t 1.5 s I = 16A, V = 0V, -di /dt = 100A/s rr F GE F I 33 A V = 100V, V = 0V RM R GE Note 1: Pulse Test, t 300 s, Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537