Advance Technical Information TM BiMOSFET Monolithic V = 3600V IXBF50N360 CES Bipolar MOS Transistor I = 28A C110 High Voltage, V 2.9V High Frequency CE(sat) (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3600 V CES J V T = 25C to 150C, R = 1M 3600 V CGR J GE 1 2 V Continuous 20 V GES Isolated Tab 5 V Transient 30 V GEM I T = 25C 70 A 1 = Gate 5 = Collector C25 C 2 = Emitter I T = 110C 28 A C110 C I T = 25C, 1ms 420 A CM C SSOA V = 15V, T = 125C, R = 5 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V V CES Features T V = 15V, T = 125C, SC GE J (SCSOA) R = 10 , V = 1500V, Non-Repetitive 10 s G CE Silicon Chip on Direct-Copper Bond P T = 25C 290 W C C (DCB) Substrate T - 55 ... +150 C Isolated Mounting Surface J 4000V~ Electrical Isolation T 150 C JM High Blocking Voltage T - 55 ... +150 C stg High Frequency Operation T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Advantages F Mounting Force with Clip 30..170 / 7..36 N/lb C V 50/60Hz, 5 Seconds 4000 V~ ISOL Low Gate Drive Requirement High Power Density Weight 8 g Applications Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV I = 250A, V = 0V 3600 V Power Supplies CES C GE Uninterruptible Power Supplies V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE (UPS) I V = 0.8 V , V = 0V 25 A CES CE CES GE Laser Generators Note 2, T = 100C 50 A Capacitor Discharge Circuits J AC Switches I V = 0V, V = 20V 200 nA GES CE GE V I = 50A, V = 15V, Note 1 2.4 2.9 V CE(SAT) C GE T = 125C 3.0 V J 2014 IXYS CORPORATION, All Rights Reserved DS100623(7/14) IXBF50N360 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E A U g I = 50A, V = 10V, Note 1 24 40 S S Q fs C CE A2 C 3990 pF ies C V = 25V, V = 0V, f = 1MHz 195 pF T oes CE GE D R C 100 pF 4 res L1 1 2 3 Q 210 nC g(on) Q I = 50A, V = 15V, V = 1000V 27 nC ge C GE CE L c Q 77 nC gc t 46 ns d(on) e A1 b1 b Resistive load, T = 25C J e1 t 420 ns r I = 50A, V = 15V C GE Pin 1 = Gate t 205 ns d(off) Pin2 = Emitter V = 960V, R = 5 Pin 3 = Collector CE G Tab 4 = Isolated t 1750 ns f t 44 ns d(on) Resistive load, T = 125C J t 845 ns r I = 50A, V = 15V C GE t 210 ns d(off) V = 960V, R = 5 CE G t 1670 ns f R 0.43 C/W thJC R 0.15 C/W thCS Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 50A, V = 0V, Note 1 3.0 V F F GE t 1.7 s rr I = 25A, V = 0V, -di /dt = 100A/s F GE F I 48 A RM V = 100V, V = 0V R GE Q 40 C RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537