High Voltage, High Gain V = 3000V IXBF55N300 CES TM BIMOSFET I = 34A C110 V 3.2V Monolithic Bipolar CE(sat) MOS Transistor (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3000 V CES C V T = 25C to 150C, R = 1M 3000 V CGR J GE V Continuous 25 V GES 1 2 V Transient 35 V Isolated Tab GEM 5 I T = 25C 86 A C25 C 1 = Gate 5 = Collector I T = 110C 34 A C110 C 2 = Emitter I T = 25C, 1ms 600 A CM C SSOA V = 15V, T = 125C, R = 2 I = 110 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES T V = 15V, T = 125C, SC GE J Features (SCSOA) R = 10 , V = 1250V, Non-Repetitive 10 s G CE z P T = 25C 357 W Silicon Chip on Direct-Copper Bond C C (DCB) Substrate T -55 ... +150 C J z Isolated Mounting Surface T 150 C z 4000V~ Electrical Isolation JM z T -55 ... +150 C High Blocking Voltage stg z High Peak Current Capability T 1.6mm (0.062 in.) from Case for 10s 300 C L z Low Saturation Voltage T Plastic Body for 10 seconds 260 C SOLD F Mounting Force 20..120 / 4.5..27 Nm/lb.in. C Advantages V 50/60Hz, 1 Minute 4000 V~ ISOL Weight 5 g z Low Gate Drive Requirement z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV I = 1mA, V = 0V 3000 V z Switch-Mode and Resonant-Mode CES C GE Power Supplies V I = 4mA, V = V 3.0 5.0 V GE(th) C CE GE z Uninterruptible Power Supplies (UPS) I V = V , V = 0V 50 A z CES CE CES GE Laser Generators Note 2, T = 125C 3 mA z J Capacitor Discharge Circuits z I V = 0V, V = 25V 200 nA AC Switches GES CE GE V I = 55A, V = 15V, Note 1 2.7 3.2 V CE(sat) C GE T = 125C 3.3 V J 2011 IXYS CORPORATION, All Rights Reserved DS100205B(11/11) IXBF55N300 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 32 50 S fS C CE C 7300 pF ies C V = 25V, V = 0V, f = 1MHz 275 pF oes CE GE C 83 pF res Q 335 nC g Q I = 55A, V = 15V, V = 1000V 47 nC ge C GE CE Q 130 nC gc t 54 ns d(on) Resistive Switching Times, T = 25C J t 307 ns r Pin 1 = Gate I = 110A, V = 15V Pin2 = Emitter C GE t 230 ns Pin 3 = Collector d(off) Tab 4 = Isolated V = 1250V, R = 2 CE G t 268 ns f t 52 ns d(on) Resistive Switching Times, T = 125C J t 585 ns r I = 110A, V = 15V C GE t 215 ns d(off) V = 1250V, R = 2 CE G t 260 ns f R 0.35 C/W thJC R 0.15 C/W thCS Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 55A, V = 0V, Note 1 2.5 V F F GE t 1.9 s I = 28A, V = 0V, -di /dt = 100A/s rr F GE F I 54 A V = 100V, V = 0V RM R GE Notes: 1. Pulse test, t < 300 s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537