IXBF 9N160 G I =7A High Voltage C25 TM V = 1600 V CES BIMOSFET TM V = 4.9 V in High Voltage ISOPLUS i4-PAC CE(sat) t = 70 ans f Monolithic Bipolar MOS Transistor 1 5 Features IGBT TM High Voltage BIMOSFET Symbol Conditions Maximum Ratings - substitute for high voltage MOSFETs with significantly lower voltage drop V T = 25C to 150C 1600 V CES VJ - MOSFET compatible control V 20 V GES 10 V turn on gate voltage - fast switching for high frequency I T = 25C 7 A C25 C operation I T = 90C 4 A C90 C - reverse conduction capability TM 10/0 I V = V R = 27 T = 125C 12 A ISOPLUS i4-PAC CM GE VJ G V RBSOA, Clamped inductive load L = 100 H 0.8V high voltage package CEK CES - isolated back surface P T = 25C 70 W tot C - enlarged creepage towards heatsink - enlarged creepage between high voltage pins Symbol Conditions Characteristic Values - application friendly pinout (T = 25C, unless otherwise specified) VJ - high reliability min. typ. max. - industry standard outline V I = 5 A V = 15 V T = 25C 4.9 7 V VJ CE(sat) C GE Applications T = 125C 5.6 V VJ switched mode power supplies V I = 0.5 mA V = V 3.5 5.5 V GE(th) C GE CE DC-DC converters resonant converters I V = 0.8V V = 0 V T = 25C 0.1 mA VJ CES CE CES GE lamp ballasts T = 125C 0.1 mA VJ laser generators, x ray generators I V = 0 V V = 20 V 500 nA GES CE GE t 140 ns d(on) Inductive load, T = 125C VJ t 200 ns r V = 960 V I = 5 A CE C t 120 ns d(off) 10/0 V = V R = 27 GE G t 70 ns f C V = 25 V V = 0 V f = 1 MHz 550 pF ies CE GE Q V = 600V V = 10 V I = 5 A 34 nC Gon CE GE C V (reverse conduction) I = 5 A 3.6 V F F R 1.75 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 1 - 4 0648IXBF 9N160 G Component Dimensions in mm (1 mm = 0.0394 ) Symbol Conditions Maximum Ratings T -55...+150 C VJ T -55...+125 C stg V I 1 mA 50/60 Hz 2500 V~ ISOL ISOL F mounting force with clip 20...120 N C Symbol Conditions Characteristic Values min. typ. max. d ,d pin 2 - pin 5 7 mm S A d ,d pin - backside metal 5.5 mm S A R with heatsink compound 0.15 K/W thCH Weight 9g IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 2 - 4 0648