V = 1700 V High Voltage, High Gain IXBH 10N170 CES TM BIMOSFET Monolithic I = 20 A IXBT 10N170 C25 Bipolar MOS Transistor V = 3.8 V CE(sat) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) V T = 25C to 150C 1700 V CES J V T = 25C to 150C R = 1 M 1700 V CGR J GE G V Continuous 20 V GES E (TAB) V Transient 30 V GEM I T = 25C20A C25 C TO-247 AD (IXBH) I T = 90C10A C90 C I T = 25C, 1 ms 40 A CM C SSOA V = 15 V, T = 125C, R = 33 I =20 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load V = 1350 V G CES C E P T = 25C 140 W C C T -55 ... +150 C G = Gate, C = Collector, J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Features Maximum Lead temperature for soldering 300 C z High Blocking Voltage 1.6 mm (0.062 in.) from case for 10 s z JEDEC TO-268 surface and Maximum Tab temperature for soldering SMD devices for 10 s 260 C JEDEC TO-247 AD z Low conduction losses M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. d z High current handling capability Weight TO-247 AD 6 g z MOS Gate turn-on TO-268 4 g - drive simplicity z Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. Applications z BV I = 250 A, V = 0 V 1700 V AC motor speed control CES C GE z Temperature Coefficent 0.10 %/K Uninterruptible power supplies (UPS) V I = 250 A, V = V 3.0 5.0 V z GE(th) C CE GE Switched-mode and resonant-mode Temperature Coefficent - 0.24 %/K power supplies z Capacitor discharge circuits I V = 0.8 V T = 25C10 A CES CE CES J V = 0 V T = 125C 100 A GE J Advantages I V = 0 V, V = 20 V 100 nA z GES CE GE High power density z Suitable for surface mounting V I = I , V = 15 V 3.4 3.8 V CE(sat) C C90 GE z Easy to mount with 1 screw, T = 125C 4.1 V J (isolated mounting screw hole) DS99048(05/03) 2003 IXYS All rights reservedIXBH 10N170 IXBT 10N170 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 4.0 6.5 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % P C 700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 40 pF oes CE GE C 12 pF res Q 30 nC g e Q I = I , V = 15 V, V = 0.5 V 6nC ge C C90 GE CE CES Dim. Millimeter Inches Q 10 nC Min. Max. Min. Max. gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 t 35 ns 1 d(on) A 2.2 2.6 .059 .098 2 t 28 ns Inductive load, T = 25C ri J b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 t 500 ns 1 I = I , V = 15 V d(off) C C90 GE b 2.87 3.12 .113 .123 2 V = 0.8 V , R = R = 56 t CE CES G off 1000 ns C .4 .8 .016 .031 fi D 20.80 21.46 .819 .845 E 6mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 35 ns L 19.81 20.32 .780 .800 d(on) L1 4.50 .177 t 28 ns ri P 3.55 3.65 .140 .144 Inductive load, T = 125C J E 0.7 mJ Q 5.89 6.40 0.232 0.252 on R 4.32 5.49 .170 .216 I = I , V = 15 V C C90 GE t 600 ns d(off) S 6.15 BSC 242 BSC V = 0.8 V , R = R = 56 CE CES G off t 1200 ns fi E 8mJ off TO-268 Outline R 0.89 K/W thJC R (TO-247) 0.25 K/W thCK Reverse Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, Pulse test, 3.0 V F F C90 GE t < 300 us, duty cycle d < 2% I I = I , V = 0 V, -di /dt = 50 A/us 10 A RM F C90 GE F t v = 100 V 360 ns rr R Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343