High Voltage, High Gain V = 1700V IXBH16N170 CES TM BIMOSFET Monolithic IXBT16N170 I = 16A C90 Bipolar MOS Transistor V 3.3V CE(sat) TO-247 (IXBH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES C V T = 25C to 150C, R = 1M 1700 V CGR J GE G V Continuous 20 V GES C (TAB) C E V Transient 30 V GEM I T = 25C 40 A C25 C TO-268 (IXBT) I T = 90C 16 A C90 C I T = 25C, 1ms 120 A CM C SSOA V = 15V, T = 125C, R = 22 I = 40 A GE VJ G CM G E (RBSOA) Clamped inductive load V 1350 V CES C (TAB) P T = 25C 250 W C C T -55 ... +150 C J G = Gate C = Collector E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C Features SOLD z M Mounting torque (TO-247) 1.13/10 Nm/lb.in. High blocking voltage d z International standard packages Weight TO-247 6 g z Low conduction losses TO-268 4 g Advantages z Low gate drive requirement z Symbol Test Conditions Characteristic Values High power density (T = 25C unless otherwise specified) Min. Typ. Max. J Applications: BV I = 250A, V = 0V 1700 V CES C GE z Switched-mode and resonant-mode V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE power supplies z Uninterruptible power supplies (UPS) I V = 0.8 V 50 A CES CE CES z Laser generator V = 0V T = 125C 2 mA GE J z Capacitor discharge circuit z I V = 0V, V = 20V 100 nA GES CE GE AC switches V I = 16A, V = 15V, Note 1 3.3 V CE(sat) C GE T = 125C 3.2 V J 2008 IXYS CORPORATION, All rights reserved DS98657B(10/08) IXBH16N170 IXBT16N170 Symbol Test Conditions Characteristic Values TO-247 (IXBH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 16A, V = 10V, Note 1 8.5 14 S fS C CE C 1960 pF ies P C V = 25V, V = 0V, f = 1MHz 85 pF 1 2 3 oes CE GE C 24 pF res Q 72 nC g Q I = 16A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 25 nC gc e t 38 ns d(on) Terminals: 1 - Gate 2 - Drain Resistive Switching times, T = 25C J 3 - Source Tab - Drain t 101 ns r I = 16A, V = 15V Dim. Millimeter Inches C GE t 125 ns Min. Max. Min. Max. d(off) V = 850V, R = 22 CE G A 4.7 5.3 .185 .209 t 480 ns f A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 37 ns d(on) b 1.0 1.4 .040 .055 Resistive Switching times, T = 125C t 183 J ns b 1.65 2.13 .065 .084 r 1 b 2.87 3.12 .113 .123 2 I = 16A, V = 15V t 235 ns C GE d(off) C .4 .8 .016 .031 D 20.80 21.46 .819 .845 V = 850V, R = 22 t 705 ns CE G f E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R 0.50 C/W L 19.81 20.32 .780 .800 thJC L1 4.50 .177 R 0.25 C/W thCS P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J V I = 16A, V = 0V 2.6 V F F GE = 8A, V = 0V, -di /dt = 100A/s I t 1.32 s F GE F rr V = 100V, V = 0V I 26 A R GE RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537