Preliminary Technical Information High Voltage, High Gain V = 3000V IXBH32N300 CES TM BIMOSFET Monolithic IXBT32N300 I = 32A C110 Bipolar MOS Transistor V 3.2V CE(sat) TO-247 (IXBH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3000 V CES C G V T = 25C to 150C, R = 1M 3000 V C (TAB) CGR J GE C E V Continuous 20 V GES V Transient 30 V GEM I T = 25C 80 A C25 C TO-268 (IXBT) I T = 110C 32 A C110 C I T = 25C, 1ms 280 A CM C SSOA V = 15V, T = 125C, R = 10 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V 2400 V CES G E P T = 25C 400 W C C C (TAB) T -55 ... +150 C J T 150 C JM G = Gate C = Collector E = Emitter TAB = Collector T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Features M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-247 6 g z High Blocking Voltage TO-268 4 g z International Standard Packages z Low Conduction Losses Symbol Test Conditions Characteristic Values Advantages (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Low Gate Drive Requirement BV I = 250A, V = 0V 3000 V CES C GE z High Power Density V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE Applications: I V = 0.8 V , V = 0V 50 A CES CE CES GE T = 125C 2 mA J z Switched-Mode and Resonant-Mode I V = 0V, V = 20V 100 nA GES CE GE Power Supplies V I = 32A, V = 15V, Note 1 2.8 3.2 V z CE(sat) C GE Uninterruptible Power Supplies (UPS) z T = 125C 3.5 V Laser Generators J z Capacitor Discharge Circuits z AC Switches 2009 IXYS CORPORATION, All Rights Reserved DS100118(02/09) IXBH32N300 IXBT32N300 Symbol Test Conditions Characteristic Values TO-247 (IXBH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 32A, V = 10V, Note 1 16 26 S fS C CE C 3140 pF ies P C V = 25V, V = 0V, f = 1MHz 124 pF 1 2 3 oes CE GE C 40 pF res Q 142 nC g Q I = 32A, V = 15V, V = 1000V 20 nC ge C GE CE Q 57 nC gc e t 50 ns d(on) Resistive Switching Times, T = 25C Terminals: 1 - Gate 2 - Drain J 3 - Source Tab - Drain t 185 ns r I = 32A, V = 15V C GE Dim. Millimeter Inches t 160 ns Min. Max. Min. Max. d(off) V = 1250V, R = 2 CE G A 4.7 5.3 .185 .209 t 720 ns f A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 58 ns d(on) Resistive Switching Times, T = 125C b 1.0 1.4 .040 .055 J t 515 ns b 1.65 2.13 .065 .084 r 1 I = 32A, V = 15V b 2.87 3.12 .113 .123 C GE 2 t 165 ns d(off) C .4 .8 .016 .031 V = 1250V, R = 2 CE G D 20.80 21.46 .819 .845 t 630 ns f E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R 0.31 C/W thJC L 19.81 20.32 .780 .800 L1 4.50 .177 R (TO-247) 0.21 C/W thCS P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 32A, V = 0V 2.1 V F F GE t 1.5 s I = 16A, V = 0V, -di /dt = 100A/s rr F GE F I V = 100V, V = 0V 33 A RM R GE Note 1: Pulse Test, t 300 s, Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537