IXBH 40N160 TM High Voltage BIMOSFET I =33A C25 Monolithic Bipolar V = 1600 V CES MOS Transistor V = 6.2 V typ. CE(sat) t =40ns fi N-Channel, Enhancement Mode C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features V T = 25C to 150C 1600 V CES J International standard package V T = 25C to 150C R = 1 M 1600 V CGR J GE JEDEC TO-247 AD TM High Voltage BIMOSFET V Continuous 20 V GES - replaces high voltage Darlingtons V Transient 30 V GEM and series connected MOSFETs - lower effective R I T = 25C 33 A DS(on) C25 C Monolithic construction I T = 90C 20 A C90 C I T = 25C, 1 ms 40 A - high blocking voltage capability CM C - very fast turn-off characteristics SSOA V = 15 V, T = 125C, R = 22 V = 0.8V I = 40 A GE VJ G CE CES CM MOS Gate turn-on (RBSOA) Clamped inductive load, L = 100 H - drive simplicity Intrinsic diode P T = 25C 350 W C C T -55 ... +150 C J Applications T 150 C JM T -55 ... +150 C stg AC motor speed control T 1.6 mm (0.063 in) from case for 10 s 300 C L DC servo and robot drives DC choppers M Mounting torque 1.15/10Nm/lb.in. d Uninterruptible power supplies (UPS) Switched-mode and resonant-mode Weight 6g power supplies CRT deflection Lamp ballasts Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. Advantages BV I = 1 mA, V = 0 V 1600 V CES C GE Easy to mount with 1 screw (isolated mounting screw hole) V I = 2 mA, V = V 48V GE(th) C CE GE Space savings I V = 0.8V T = 25C 400 A High power density CES CE CES J V = 0 V T = 125C 3 mA GE J I V = 0 V, V = 20 V 500 nA GES CE GE V I = I , V = 15 V 6.2 7.1 V CE(sat) C C90 GE T = 125C 7.8 V J IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 1 - 4 0648IXBH 40N160 Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. C 3300 pF ies C V = 25 V, V = 0 V, f = 1 MHz 220 pF oes CE GE C 30 pF res Q I = 20 A, V = 600 V, V = 15 V 130 nC g C CE GE t 200 ns d(on) Inductive load, T = 125C J t 60 ns ri I = I , V = 15 V, L = 100 H, C C90 GE t 270 ns d(off) V = 960 V, R = 22 CE G t 40 ns fi R 0.35 K/W thJC R 0.25 K/W thCK Reverse Conduction Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. V I = I , V = 0 V, Pulse test 2.5 5 V F F C90 GE t < 300 s, duty cycle d < 2% TO-247 AD Outline Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 2 - 4 0648