High Voltage, High Gain V = 1700V IXBH42N170 CES TM BIMOSFET Monolithic IXBT42N170 I = 42A C90 Bipolar MOS Transistor V 2.8V CE(sat) TO-247 (IXBH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES C V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES G V Transient 30 V C (TAB) GEM C E I T = 25C 80 A C25 C I Terminal Current Limit 75 A LRMS TO-268 (IXBT) I T = 90C 42 A C90 C I T = 25C, 1ms 300 A CM C SSOA V = 15V, T = 125C, R = 10 I = 100 A GE VJ G CM G E (RBSOA) Clamped inductive load V 1350 V CES C (TAB) P T = 25C 360 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter TAB = Collector 150 C T JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L Features T Plastic body for 10 seconds 260 C SOLD z High blocking voltage M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d z International standard packages z Weight TO-247 6 g Low conduction losses TO-268 4 g Advantages z Low gate drive requirement z High power density Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. Applications: J BV I = 250A, V = 0V 1700 V z CES C GE Switched-mode and resonant-mode power supplies V I = 250A, V = V 2.5 5.5 V GE(th) C CE GE z Uninterruptible power supplies (UPS) z Laser generator I V = 0.8 V 50 A CES CE CES z V = 0V T = 125C 1.5 mA Capacitor discharge circuit GE J z AC switches I V = 0V, V = 20V 100 nA GES CE GE V I = 42A, V = 15V, Note 1 2.8 V CE(sat) C GE T = 125C 2.7 V J 2008 IXYS CORPORATION, All rights reserved DS98710C(10/08) IXBH42N170 IXBT42N170 Symbol Test Conditions Characteristic Values TO-247 (IXBH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 42A, V = 10V, Note 1 24 32 S fS C CE C 3990 pF ies P C V = 25V, V = 0V, f = 1MHz 225 pF 1 2 3 oes CE GE C 70 pF res Q 188 nC g Q I = 42A, V = 15V, V = 0.5 V 29 nC ge C GE CE CES Q 76 nC gc e t 37 ns d(on) Terminals: 1 - Gate 2 - Drain Resistive Switching times, T = 25C J 3 - Source Tab - Drain t 139 ns r I = 42A, V = 15V Dim. Millimeter Inches C GE t 340 ns Min. Max. Min. Max. d(off) V = 850V, R = 10 CE G A 4.7 5.3 .185 .209 t 665 ns f A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 36 ns d(on) b 1.0 1.4 .040 .055 Resistive Switching times, T = 125C t 188 J ns b 1.65 2.13 .065 .084 r 1 b 2.87 3.12 .113 .123 2 I = 42A, V = 15V t 330 ns C GE d(off) C .4 .8 .016 .031 D 20.80 21.46 .819 .845 V = 850V, R = 10 t 740 ns CE G f E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R 0.35 C/W L 19.81 20.32 .780 .800 thJC L1 4.50 .177 R (TO-247) 0.25 C/W thCS P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J V I = 42A, V = 0V 2.8 V F F GE = 21A, V = 0V, -di /dt = 100A/s I t 1.32 s F GE F rr V = 100V I 36 A R RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537