X-On Electronics has gained recognition as a prominent supplier of IXBH6N170 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXBH6N170 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXBH6N170 IXYS

IXBH6N170 electronic component of IXYS
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Part No.IXBH6N170
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 12 Amps 1700V 3.6 Rds
Datasheet: IXBH6N170 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.0975 ea
Line Total: USD 11.1 
Availability - 182
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
182
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 11.0975
30 : USD 7.4405
120 : USD 7.1415

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
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Mounting Style
Technology
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Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
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Continuous Collector Current
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We are delighted to provide the IXBH6N170 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXBH6N170 and other electronic components in the IGBT Transistors category and beyond.

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High Voltage, High Gain V = 1700V IXBH6N170 CES TM BIMOSFET Monolithic IXBT6N170 I = 6A C90 Bipolar MOS Transistor V 3.4V CE(sat) TO-247 (IXBH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES C V T = 25C to 150C, R = 1M 1700 V CGR J GE G V Continuous 20 V GES C (TAB) C E V Transient 30 V GEM I T = 25C 12 A C25 C TO-268 (IXBT) I T = 90C 6 A C90 C I T = 25C, 1ms 36 A CM C SSOA V = 15V, T = 125C, R = 24 I = 16 A GE VJ G CM G E (RBSOA) Clamped inductive load V 1350 V CES C (TAB) P T = 25C 75 W C C T -55 ... +150 C J G = Gate C = Collector E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C Features SOLD z M Mounting torque (TO-247) 1.13/10 Nm/lb.in. High blocking voltage d z Integrated Anti-parallel diode Weight TO-247 6 g z International standard packages TO-268 4 g z Low conduction losses Advantages z Symbol Test Conditions Characteristic Values Low gate drive requirement z (T = 25C, unless otherwise specified) Min. Typ. Max. High power density J BV I = 250A, V = V 1700 V CES C CE GE Applications: V I = 250A, V = V 2.5 5.5 V GE(th) C CE GE z Switched-mode and resonant-mode I V = 0.8 V 10 A power supplies CES CE CES s z Uninterruptible power supplies (UPS) V = 0V T = 125C 100 A GE J z Laser generator I V = 0V, V = 20V 100 nA z GES CE GE Capacitor discharge circuit z V I = 6A, V = 15V, Note 1 2.84 3.40 V AC switches CE(sat) C GE T = 125C 3.46 V J 2008 IXYS CORPORATION, All rights reserved DS99004C(10/08) IXBH6N170 IXBT6N170 Symbol Test Conditions Characteristic Values TO-247 (IXBH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 6A, V = 10V, Note 1 2.0 3.5 S fS C CE C 378 pF ies P C V = 25V, V = 0V, f = 1MHz 25 pF 1 2 3 oes CE GE C 9 pF res Q 17.0 nC g Q I = 6A, V = 15V, V = 0.5 V 2.5 nC ge C GE CE CES Q 9.6 nC gc e t 32 ns d(on) Terminals: 1 - Gate 2 - Drain Resistive Switching times, T = 25C J 3 - Source t 59 ns r I = 6A, V = 15V Dim. Millimeter Inches C GE t 105 ns Min. Max. Min. Max. d(off) V = 850V, R = 24 CE G A 4.7 5.3 .185 .209 t 690 ns f A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 35 ns d(on) b 1.0 1.4 .040 .055 Resistive Switching times, T = 125C t 69 J ns b 1.65 2.13 .065 .084 r 1 b 2.87 3.12 .113 .123 2 I = 6A, V = 15V t 100 ns C GE d(off) C .4 .8 .016 .031 D 20.80 21.46 .819 .845 V = 850V, R = 24 t 600 ns CE G f E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R 1.65 C/W L 19.81 20.32 .780 .800 thJC L1 4.50 .177 R 0.25 C/W thCS P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J V I = 6A, V = 0V, Note 1 3.0 V F F GE = 6A, V = 0V, -di /dt = 100A/s I t 1.08 s F GE F rr V = 100V, V = 0V I 12.0 A R GE RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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