High Voltage, High Gain V = 1700V IXBH6N170 CES TM BIMOSFET Monolithic IXBT6N170 I = 6A C90 Bipolar MOS Transistor V 3.4V CE(sat) TO-247 (IXBH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES C V T = 25C to 150C, R = 1M 1700 V CGR J GE G V Continuous 20 V GES C (TAB) C E V Transient 30 V GEM I T = 25C 12 A C25 C TO-268 (IXBT) I T = 90C 6 A C90 C I T = 25C, 1ms 36 A CM C SSOA V = 15V, T = 125C, R = 24 I = 16 A GE VJ G CM G E (RBSOA) Clamped inductive load V 1350 V CES C (TAB) P T = 25C 75 W C C T -55 ... +150 C J G = Gate C = Collector E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C Features SOLD z M Mounting torque (TO-247) 1.13/10 Nm/lb.in. High blocking voltage d z Integrated Anti-parallel diode Weight TO-247 6 g z International standard packages TO-268 4 g z Low conduction losses Advantages z Symbol Test Conditions Characteristic Values Low gate drive requirement z (T = 25C, unless otherwise specified) Min. Typ. Max. High power density J BV I = 250A, V = V 1700 V CES C CE GE Applications: V I = 250A, V = V 2.5 5.5 V GE(th) C CE GE z Switched-mode and resonant-mode I V = 0.8 V 10 A power supplies CES CE CES s z Uninterruptible power supplies (UPS) V = 0V T = 125C 100 A GE J z Laser generator I V = 0V, V = 20V 100 nA z GES CE GE Capacitor discharge circuit z V I = 6A, V = 15V, Note 1 2.84 3.40 V AC switches CE(sat) C GE T = 125C 3.46 V J 2008 IXYS CORPORATION, All rights reserved DS99004C(10/08) IXBH6N170 IXBT6N170 Symbol Test Conditions Characteristic Values TO-247 (IXBH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 6A, V = 10V, Note 1 2.0 3.5 S fS C CE C 378 pF ies P C V = 25V, V = 0V, f = 1MHz 25 pF 1 2 3 oes CE GE C 9 pF res Q 17.0 nC g Q I = 6A, V = 15V, V = 0.5 V 2.5 nC ge C GE CE CES Q 9.6 nC gc e t 32 ns d(on) Terminals: 1 - Gate 2 - Drain Resistive Switching times, T = 25C J 3 - Source t 59 ns r I = 6A, V = 15V Dim. Millimeter Inches C GE t 105 ns Min. Max. Min. Max. d(off) V = 850V, R = 24 CE G A 4.7 5.3 .185 .209 t 690 ns f A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 35 ns d(on) b 1.0 1.4 .040 .055 Resistive Switching times, T = 125C t 69 J ns b 1.65 2.13 .065 .084 r 1 b 2.87 3.12 .113 .123 2 I = 6A, V = 15V t 100 ns C GE d(off) C .4 .8 .016 .031 D 20.80 21.46 .819 .845 V = 850V, R = 24 t 600 ns CE G f E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R 1.65 C/W L 19.81 20.32 .780 .800 thJC L1 4.50 .177 R 0.25 C/W thCS P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. J V I = 6A, V = 0V, Note 1 3.0 V F F GE = 6A, V = 0V, -di /dt = 100A/s I t 1.08 s F GE F rr V = 100V, V = 0V I 12.0 A R GE RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537