IXBH 9N160G TM High Voltage BIMOSFET I =9A C25 Monolithic Bipolar V = 1600 V CES MOS Transistor V = 4.9 V typ. CE(sat) t =70ns fi N-Channel, Enhancement Mode C TO-247 AD MOSFET compatible G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features TM High Voltage BIMOSFET V T = 25C to 150C 1600 V CES J - replaces high voltage Darlingtons V T = 25C to 150C R = 1 M 1600 V CGR J GE and series connected MOSFETs V Continuous 20 V GES - lower effective R DS(on) V Transient 30 V GEM MOS Gate turn-on - drive simplicity I T = 25C 9 A C25 C - MOSFET compatible for 10V I T = 90C 5 A C90 C turn on gate voltage I T = 25C, 1 ms 10 A CM C Monolithic construction - high blocking voltage capability SSOA V = 10 V, T = 125C, R = 27 V = 0.8V I = 12 A GE VJ G CE CES CM - very fast turn-off characteristics (RBSOA) Clamped inductive load, L = 100 H International standard package P T = 25C 100 W C C JEDEC TO-247 AD C4 Reverse conducting capability T -55 ... +150 C J T 150 C JM Applications T -55 ... +150 C stg Flyback converters T 1.6 mm (0.063 in) from case for 10 s 300 C L DC choppers M Mounting torque 1.15 Nm d Uninterruptible power supplies (UPS) Switched-mode and resonant-mode Weight 6g power supplies CRT deflection Lamp ballasts Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) Advantages J min. typ. max. Easy to mount with 1 screw (isolated mounting screw hole) BV I = 0.25 mA, V = 0 V 1600 V CES C GE Space savings V I = 0.5 mA, V = V 3.5 5.5 V GE(th) C CE GE High power density I V = 0.8V T = 25C 100 A CES CE CES J V = 0 V T = 125C 0.1 mA GE J I V = 0 V, V = 20 V 500 nA GES CE GE V I = I , V = 15 V 4.9 7 V CE(sat) C C90 GE T = 125C 5.6 V J IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 1 - 4 0648IXBH 9N160G Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. C 550 pF ies C V = 25 V, V = 0 V, f = 1 MHz 36 pF oes CE GE C 5pF res Q I = 5 A, V = 600 V, V = 10 V 34 nC g C CE GE t 140 ns d(on) Inductive load, T = 125C J t 200 ns ri I = I , V = 10 V, L = 100 H, C C90 GE t 120 ns d(off) V = 960 V, R = 27 CE G t 70 ns fi R 1.25 K/W thJC R 0.25 K/W thCK Reverse Conduction Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. V I = I , V = 0 V 3.6 5 F F C90 GE TO-247 AD Outline Dim. Millimeter Inches C4 Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 2 - 4 0648