High Voltage, High Gain V = 3000V IXBK55N300 CES TM BiMOSFET I = 55A IXBX55N300 C110 V 3.2V CE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings G C V T = 25C to 150C 3000 V CES J E Tab V T = 25C to 150C, R = 1M 3000 V CGR J GE V Continuous 25 V GES PLUS247 (IXBX) V Transient 35 V GEM I T = 25C ( Chip Capability ) 130 A C25 C I T = 25C ( Lead RMS Limit ) 120 A LRMS C I T = 110C 55 A C110 C G G I T = 25C, 1ms 600 A C CM C Tab E SSOA V = 15V, T = 125C, R = 2 I = 110 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES G = Gate E = Emitter C = Collector Tab = Collector T V = 15V, T = 125C, SC GE J (SCSOA) R = 10, V = 1250V, Non-Repetitive 10 s G CE P T = 25C 625 W C C Features T -55 ... +150 C J z T 150 C High Blocking Voltage JM z International Standard Packages T -55 ... +150 C stg z Low Conduction Losses T Maximum Lead Temperature for Soldering 300 C L z High Current Handling Capability T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD z MOS Gate Turn-On M Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in. - Drive Simplicity d F Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 1mA, V = 0V 3000 V CES C GE Applications V I = 4mA, V = V 3.0 5.0 V GE(th) C CE GE z Uninterruptible Power Supplies (UPS) I V = V , V = 0V 50 A CES CE CES GE z Switch-Mode and Resonant-Mode T = 125C 3 mA J Power Supplies z I V = 0V, V = 25V 200 nA Capacitor Discharge Circuits GES CE GE z Laser Generators V I = 55A, V = 15V, Note 1 2.7 3.2 V CE(sat) C GE T = 125C 3.3 V J DS100158A(11/11) 2011 IXYS CORPORATION, All Rights ReservedIXBK55N300 IXBX55N300 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 32 50 S fS C CE C 7300 pF ies C V = 25V, V = 0V, f = 1MHz 275 pF oes CE GE C 83 pF res Q 335 nC g Q I = 55A, V = 15V, V = 1000V 47 nC ge C GE CE Q 130 nC gc t 54 ns d(on) Resistive Switching Times, T = 25C J t 307 ns r I = 110A, V = 15V C GE t 230 ns 1 - GATE d(off) V = 1250V, R = 2 2,4 - COLLECTOR CE G t 268 ns f 3 - EMITTER t 52 ns d(on) Resistive Switching Times, T = 125C J t 585 ns r I = 110A, V = 15V C GE 215 ns t d(off) V = 1250V, R = 2 CE G t 260 ns f R 0.20 C/W thJC R 0.15 C/W thCS TM PLUS 247 Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 55A, V = 0V, Note 1 2.5 V F F GE t 1.9 s I = 28A, V = 0V, -di /dt = 100A/s rr F GE F I 54 A V = 100V, V = 0V RM R GE 1 - GATE 2 - COLLECTOR 3 - EMITTER Dim. Millimeter Inches Min. Max. Min. Max. Note 1: Pulse Test, t 300 s, Duty Cycle, d 2%. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 Additional provisions for lead-to-lead isolation are required at V >1200V. 2 CE b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537