Preliminary Technical Information TM BiMOSFET Monolithic V = 1700V IXBK75N170 CES Bipolar MOS Transistor I = 75A IXBX75N170 C110 V 3.1V CE(sat) TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J V T = 25C to 150C, R = 1M 1700 V CGR J GE G C V Continuous 20 V Tab GES E V Transient 30 V GEM TM I T = 25C (Chip Capabilitty) 200 A PLUS247 (IXBX) C25 C I T = 25C (Lead RMS Limit) 160 A LRMS C I T = 110C 75 A C110 C I T = 25C, 1ms 580 A CM C SSOA V = 15V, T = 125C, R = 1 I = 150 A GE VJ G CM G (RBSOA) Clamped Inductive Load V < 0.8 V C Tab CE CES E P T = 25C 1040 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter Tab = Collector T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10 260 C z SOLD International Standard Packages z High Blocking Voltage M Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in. d z High Current Handling Capability F Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb. C z Anti-Parallel Diode Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density z Low Gate Drive Requirement z Symbol Test Conditions Characteristic Values Intergrated Diode Can Be Used for (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Protection BV I = 250A, V = 0V 1700 V CES C GE V I = 1.5mA, V = V 2.5 5.5 V Applications GE(th) C CE GE I V = 0.8 V , V = 0V 25 A z CES CE CES GE Capacitor Discharge z T = 125C 2 mA AC Switches J z Switch-Mode and Resonant-Mode I V = 0V, V = 20V 100 nA GES CE GE Power Supplies V I = I , V = 15V, Note 1 2.6 3.1 V z CE(sat) C C110 GE UPS T = 125C 3.1 V z J AC Motor Drives DS100167A(10/09) 2009 IXYS CORPORATION, All Rights Reserved IXBK75N170 IXBX75N170 Symbol Test Conditions Characteristic Values TO-264 AA ( IXBK) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 34 56 S fS C C110 CE C 6930 pF ies C V = 25V, V = 0V, f = 1MHz 400 pF oes CE GE C 150 pF res Q 350 nC g Q I = I , V = 15V, V = 0.5 V 50 nC ge C C110 GE CE CES Q 160 nC gc t 46 ns d(on) Resistive load, T = 25C J Dim. Millimeter Inches t 160 ns r I = I , V = 15V Min. Max. Min. Max. C C110 GE t 260 ns A 4.82 5.13 .190 .202 d(off) R = 1, V = 0.5 V A1 2.54 2.89 .100 .114 G CE CES t 440 ns A2 2.00 2.10 .079 .083 f b 1.12 1.42 .044 .056 t 47 ns b1 2.39 2.69 .094 .106 d(on) Resistive load, T = 125C J b2 2.90 3.09 .114 .122 t 230 ns r c 0.53 0.83 .021 .033 I = I , V = 15V C C110 GE D 25.91 26.16 1.020 1.030 t 260 ns d(off) E 19.81 19.96 .780 .786 R = 1, V = 0.5 V G CE CES t 580 ns e 5.46 BSC .215 BSC f J 0.00 0.25 .000 .010 R 0.12 C/W K 0.00 0.25 .000 .010 thJC L 20.32 20.83 .800 .820 R 0.15 C/W L1 2.29 2.59 .090 .102 thCS P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Reverse Diode TM Symbol Test Conditions Characteristic Values PLUS247 (IXBX) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = I , V = 0V, Note 1 3.0 V F F C110 GE t 1.5 s rr I = 37A, V = 0V, -di /dt = 100A/s F GE F I 50 A RM V = 100V, V = 0V R GE Q 38.2 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) >1200V. Additional provisions for lead-to-lead isolation are required at V CE Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 PRELIMINARY TECHNICAL INFORMATION b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 The product presented herein is under development. The Technical Specifications offered are derived b 2.92 3.12 .115 .123 2 from data gathered during objective characterizations of preliminary engineering lots but also may yet C 0.61 0.80 .024 .031 contain some information supplied during a pre-production design evaluation. IXYS reserves the right D 20.80 21.34 .819 .840 to change limits, test conditions, and dimensions without notice. E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537