Advance Technical Information High Voltage, V = 3600V IXBL60N360 CES High Frequency, I = 36A TM C110 BiMOSFET Monolithic V 3.4V Bipolar MOS Transistor CE(sat) (Electrically Isolated Tab) TM ISOPLUS i5-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3600 V CES J V T = 25C to 150C, R = 1M 3600 V G CGR J GE E C V Continuous 20 V Isolated Tab GES V Transient 30 V GEM G = Gate C = Collector I T = 25C 92 A C25 C E = Emitter I T = 110C 36 A C110 C I T = 25C, 1ms 720 A CM C SSOA V = 15V, T = 125C, R = 4.7 I = 480 A GE VJ G CM (RBSOA) Clamped Inductive Load V 1500 V CES Features T V = 15V, T = 125C, SC GE J (SCSOA) R = 52 , V = 1500V, Non-Repetitive 10 s G CE Silicon Chip on Direct-Copper Bond P T = 25C 417 W C C (DCB) Substrate T -55 ... +150 C Isolated Mounting Surface J 4000V~ Electrical Isolation T 150 C JM High Blocking Voltage T -55 ... +150 C stg High Frequency Operation T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Advantages F Mounting Force with Clip 30..170 / 7..36 N/lb C Low Gate Drive Requirement V 50/60Hz, 5 Seconds 4000 V~ ISOL High Power Density Weight 8 g Applications Switch-Mode and Resonant-Mode Symbol Test Conditions Characteristic Values Power Supplies (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Uninterruptible Power Supplies BV I = 250A, V = 0V 3600 V (UPS) CES C GE Laser Generators V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Capacitor Discharge Circuits I V = 3000V, V = 0V 25 A CES CE GE AC Switches Note 2, T = 100C 125 A J I V = 0V, V = 20V 200 nA GES CE GE V I = 60A, V = 15V, Note 1 2.8 3.4 V CE(SAT) C GE T = 125C 3.4 V J 2013 IXYS CORPORATION, All Rights Reserved DS100577(11/13) IXBL60N360 Symbol Test Conditions Characteristic Values TM ISOPLUS i5-Pak HV (IXBL) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E S g I = 60A, V = 10V, Note 1 37 62 S fs C CE C 8140 pF ies C V = 25V, V = 0V, f = 1MHz 367 pF oes CE GE 4 + 1 2 3 C 174 pF res R Integrated Gate Input Resistance 5.0 Gi Q 450 nC g(on) Q I = 60A, V = 15V, V = 1000V 52 nC c b1 e1 ge C GE CE e1 b3b2 e Q 187 nC PIN 1 = Gate gc PIN 2 = Emitter PIN 3 = Collector PIN 4 = Isolated t 50 ns d(on) Resistive load, T = 25C SYM INCHES MILLIMETER J t 300 ns MIN MAX MIN MAX r I = 60A, V = 15V C GE A 0.190 0.205 4.83 5.21 t 340 ns d(off) V = 960V, R = 4.7 CE G A1 0.102 0.118 2.59 3.00 t 910 ns f A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 t 56 ns d(on) Resistive load, T = 125C J b1 0.063 0.072 1.60 1.83 t 674 ns r b2 0.058 0.068 1.47 1.73 I = 60A, V = 15V C GE t 370 ns c 0.020 0.029 0.51 0.74 d(off) V = 960V, R = 4.7 CE G D 1.020 1.040 25.91 26.42 t 1025 ns f E 0.770 0.799 19.56 20.29 R 0.30 C/W e 0.150 BSC 3.81 BSC thJC e1 0.450 BSC 11.43 BSC R 0.15 C/W thCS L 0.780 0.820 19.81 20.83 L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 Reverse Diode R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 Symbol Test Conditions Characteristic Values T 0.801 0.821 20.34 20.85 (T = 25C Unless Otherwise Specified) Min. Typ. Max J U 0.065 0.080 1.65 2.03 V I = 60A, V = 0V, Note 1 5.0 V F F GE t 1.95 s rr I = 30A, V = 0V, -di /dt = 150A/s F GE F I 78 A RM V = 100V, V = 0V R GE Q 75.7 C RM ADVANCE TECHNICAL INFORMATION Notes: The product presented herein is under development. The Technical Specifica- 1. Pulse test, t 300 s, duty cycle, d 2%. tions offered are derived from a subjective 2. Device must be heatsunk for high-temperature leakage current evaluation of the design, based upon prior measurements to avoid thermal runaway. knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537