High Voltage, High Gain V = 2500V IXBL64N250 CES TM BiMOSFET I = 46A C110 V 3.0V CE(sat) Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) TM ISOPLUS i5-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V CES J V T = 25C to 150C, R = 1M 2500 V G CGR J GE E Isolated Tab C V Continuous 25 V GES V Transient 35 V GEM I T = 25C 116 A G = Gate C = Collector C25 C E = Emitter I T = 110C 46 A C110 C I T = 25C, 1ms 750 A CM C SSOA V = 15V, T = 125C, R = 1 I = 160 A GE VJ G CM (RBSOA) Clamped Inductive Load V < 0.8 V CE CES Features T V = 15V, T = 125C SC GE J Silicon Chip on Direct-Copper Bond (SCSOA) R = 5, V = 1250V, Non-Repetitive 10 s G CE (DCB) Substrate P T = 25C 500 W C C Isolated Mounting Surface T -55 ... +150 C 2500V Electrical Isolation J High Blocking Voltage T 150 C JM Low Switching Losses T -55 ... +150 C stg High Current Handling Capability T Maximum Lead Temperature for Soldering 300 C L Anti-Parallel Diode T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD V 50/60Hz, 1 minute 2500 V~ ISOL Advantages F Mounting Force with Clip 30..170 / 7..36 Nm/lb-in. C High Power Density Weight 8g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Switch-Mode and Resonant-Mode J Power Supplies BV I = 1mA, V = 0V 2500 V CES C GE Uninterrupted Power Supplies (UPS) V I = 4mA, V = V 3.0 5.0 V GE(th) C CE GE Capacitor Discharge Circuits Laser Generators I V = 0.8 V , V = 0V 50 A CES CE CES GE Note 2, T = 125C 6 mA J I V = 0V, V = 25V 200 nA GES CE GE V I = 64A, V = 15V, Note 1 2.5 3.0 V CE(sat) C GE T = 125C 3.1 V J DS100259A(5/18) 2018 IXYS CORPORATION, All Rights Reserved IXBL64N250 Symbol Test Conditions Characteristic Values TM ISOPLUS i5-Pak HV (IXBL) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E S g I = 64A, V = 10V, Note 1 40 72 S fS C CE C 8900 pF ies C V = 25V, V = 0V, f = 1MHz 345 pF 4 oes CE GE + 1 2 3 C 118 pF res Q 400 nC g Q I = 64A, V = 15V, V = 600V 46 nC ge C GE CE c b1 e1 e1 Q 155 nC b3b2 gc e Pin 1 = Gate Pin 2 = Emitter t 49 ns d(on) Pin 3 = Collector Tab 4 = Electrically Isolated Resistive Switching Times, T = 25C J t 318 ns r SYM INCHES MILLIMETER I = 128A, V = 15V MIN MAX MIN MAX C GE t 232 ns d(off) A 0.190 0.205 4.83 5.21 V = 1250V, R = 1 CE G t 170 ns f A1 0.102 0.118 2.59 3.00 A2 0.046 0.055 1.17 1.40 t 54 ns d(on) b 0.045 0.055 1.14 1.40 Resistive Switching Times, T = 125C J t 578 ns b1 0.063 0.072 1.60 1.83 r I = 128A, V = 15V C GE b2 0.058 0.068 1.47 1.73 222 ns t d(off) c 0.020 0.029 0.51 0.74 V = 1250V, R = 1 CE G t 175 ns D 1.020 1.040 25.91 26.42 f E 0.770 0.799 19.56 20.29 R 0.25 C/W thJC e 0.150 BSC 3.81 BSC R 0.15 C/W e1 0.450 BSC 11.43 BSC thCS L 0.780 0.820 19.81 20.83 L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 Reverse Diode T 0.801 0.821 20.34 20.85 Symbol Test Conditions Characteristic Values U 0.065 0.080 1.65 2.03 (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 64A, V = 0V, Note 1 3.0 V F F GE t 160 ns rr I = 64A, V = 0V, -di /dt = 650A/s F GE F I V = 600V, V = 0V 480 A RM R GE Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. Additional provisions for lead-to-lead isolation are required at V >1200V. CE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537