TM BiMOSFET Monolithic V = 1700V IXBN75N170A CES Bipolar MOS Transistor I = 42A C90 V 6.00V CE(sat) t = 60ns fi(typ) E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E V T = 25C to 150C 1700 V CES J G V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E I T = 25C 75 A C25 C C I T = 90C 42 A C90 C G = Gate, C = Collector, E = Emitter I T = 25C, 1ms 350 A CM C either emitter terminal can be used as SSOA V = 15V, T = 125C, R = 1 I = 100 A Main or Kelvin Emitter GE VJ G CM (RBSOA) Clamped Inductive Load V < 0.8 V CE CES P T = 25C 625 W C C Features T -55 ... +150 C J International Standard Package T 150 C JM High Blocking Voltage T -55 ... +150 C stg Fast Switching T Maximum Lead Temperature for Soldering 300 C L Isolation Voltage 3000 V~ T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD High Current Handling Capability V 50/60Hz t = 1min 2500 V~ Anti-Parallel Diode ISOL I 1mA t = 1s 3000 V~ ISOL M Mounting Torque 1.5/13 Nm/lb.in. d Advantages Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in. Weight 30 g High Power Density Low Gate Drive Requirement Easy to Mount with 2 Screws Intergrated Diode Can Be Used for Protection Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 1700 V CES C GE V I = 1.5mA, V = V 2.5 5.5 V Switched-Mode and Resonant-Mode GE(th) C CE GE Power Supplies I V = 0.8 V , V = 0V 50 A CES CE CES GE UPS T = 125C 3 mA J AC Motor Drives Substitutes for High Voltage MOSFET I V = 0V, V = 20V 100 nA GES CE GE V I = I , V = 15V, Note 1 4.95 6.00 V CE(sat) C C90 GE T = 125C 5.15 V J DS98938B(8/16) 2016 IXYS CORPORATION, All Rights Reserved IXBN75N170A Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXBN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 28 48 S fS C CE C90 C 7200 pF ies C V = 25V, V = 0V, f = 1MHz 450 pF oes CE GE C 150 pF res Q 358 nC g Q I = I , V = 15V, V = 0.5 V 46 nC ge C GE CE CES C90 Q 148 nC gc t 26 ns d(on) Inductive load, T = 25C J t 40 ns ri I = I , V = 15V C C90 GE t 418 ns d(off) V = 0.8 V , R = 1 CE CES G t 60 110 ns fi Note 2 E 3.80 7.00 mJ off t 27 ns d(on) Inductive load, T = 125C J t 38 ns ri I = I , V = 15V C C90 GE t 420 ns d(off) V = 0.8 V , R = 1 CE CES G t 175 ns fi Note 2 E 6.35 mJ off R 0.20 C/W thJC R 0.05 C/W thCS Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = I , V = 0V, Note 1 5.5 V F F GE C90 360 ns t rr I = I , V = 0V, -di /dt = 100A/s F C90 GE F I 19 A RM V = 100V, V = 0V Q 3.5 C R GE RM Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G Additional provisions for lead-to-lead isolation are required at V >1200V. CE IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537