IXBOD2-04 IXYS

IXBOD2 2 V = 400-1400 V BO Breakover Diode Gen I = 0.9 A AVM (BOD2) V BO Standard Types A V K 400 50 IXBOD2-04 A 500 50 IXBOD2-05 600 50 IXBOD2-06 K Backside: isolated 700 50 IXBOD2-07 800 50 IXBOD2-08 900 50 IXBOD2-09 1000 50 IXBOD2-10 1100 50 IXBOD2-11 1200 50 IXBOD2-12 1300 50 IXBOD2-13 1400 50 IXBOD2-14 Features / Advantages: Applications: Package: FP-Case Extra fast turn-on High voltage circuit protection Industry standard outline Very low temperature dependance Transient voltage protection RoHS compliant Very low leakage current Trigger device Epoxy meets UL 94V-0 Power pulse generators Soldering pins for PCB mounting Lightning and arcing protection Base plate: Plastic overmolded tab Energy discharge circuits Reduced weight Battery overvoltage protection Solar array protection Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise speci ed 20210720b 2020 IXYS All rights reserved 1 - 4IXBOD2 BOD2 Ratings Symbol De nitions Conditions min. typ. max. drain current I V = 0.8V T = 25C 10 A D D BO VJ T = 125C 200 A VJ breakover voltage V V (T ) = V 1 + K (T - 25C) V BO BO VJ BO, 25C T VJ I RMS current f = 50 Hz T = 50C 1.4 A RMS amb pins soldered to printed circuit (conductor 0.035x2mm) maximum average forward current I 0.9 A FAVM maximum pulsed source current I t = 0.1 ms non repetitive T = 150C 250 A SM p VJ 2 2 2 I t value for fusing I t t = 0.1 ms T = 150C 3.1 A s p VJ -3 -1 K temperature coef cient of V 0.710 K T BO coef cient for energy per pulse EP (material constant) K 700 K/Ws P R thermal resistance junction to ambient natural convection 60 K/W thJA with air speed 2 m/s 45 K/W breakover current I T = 25C 15 mA BO VJ T = 150C 6 mA VJ holding current I T = 25C 20 mA H VJ T = 150C 12 mA VJ holding voltage V T = 25C 4 8 V H VJ critical rate of rise of voltage (dv/dt) V = 0.9V T = 25C 3000 V/s cr D BO VJ T = 150C 1000 V/s VJ critical rate of rise of curent (di/dt) I = 100 A V = V f = 50 Hz T = 150C 200 A/s cr T D BO VJ I = 600 A non repetitive 500 A/s T t turn-off time V = 0.75V V = 0 V I = 100 A T = 125C 200 s q D BO R T VJ dv/dt = 5000 V/s di/dt = -500 A/s (lin.) forward voltage drop V I = 10 A T = 125C 1.3 V T T VJ T = 150C 1.2 V VJ V threshold voltage 0.75 V T0 for power-loss calculation only T = 150C VJ slope resistance r 0.05 T 68 k 400 nH V 100 nF d IXBOD I = 400 A, di/dt = 2000 A/s t IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise speci ed 20210720b 2020 IXYS All rights reserved 2 - 4