IXBP 5N160 G I = 5.7 A High Voltage C25 IXBH 5N160 G TM V = 1600 V CES BIMOSFET V = 4.9 V CE(sat) t = 70 ns Monolithic Bipolar MOS Transistor f C TO-220 AB (IXBP) Preliminary data sheet G C C (TAB) E G TO-247 AD (IXBH) E G C C (TAB) E A = Anode, C = Cathode , TAB = Cathode IGBT Features TM Symbol Conditions Maximum Ratings High Voltage BIMOSFET - substitute for high voltage MOSFETs V T = 25C to 150C 1600 V CES VJ with significantly lower voltage drop - MOSFET compatible control V 20 V GES 10 V turn on gate voltage I T = 25C 5.7 A C25 C - fast switching for high frequency I T = 90C 3.5 A C90 C operation - reverse conduction capability 10/0 I V = V R = 47 T = 125C 6 A CM GE VJ G industry standard package V RBSOA, Clamped inductive load L = 100 H 0.8V CEK CES - TO-220AB - TO-247AD P T = 25C 68 W tot C epoxy meets UL94V-0 Symbol Conditions Characteristic Values Applications (T = 25C, unless otherwise specified) VJ switched mode power supplies min. typ. max. DC-DC converters V I = 3 A V = 15 V T = 25C 4.9 7.2 V resonant converters VJ CE(sat) C GE T = 125C 5.6 V lamp ballasts VJ laser generators, x ray generators V I = 0.3 mA V = V 3.5 5.5 V GE(th) C GE CE I V = 0 V V = V T = 25C 150 A VJ CES GE CE CES V = 0.8V T = 125C 50 A VJ CE CES I V = 0 V V = 20 V 100 nA GES CE GE t 140 ns d(on) Inductive load, T = 125C VJ t 200 ns r V = 960 V I = 3 A CE C t 120 ns d(off) 10/0 V = V R = 47 GE G t 70 ns f C V = 25 V V = 0 V f = 1 MHz 325 pF ies CE GE Q V = 600V V = 10 V I = 3 A 26 nC Gon CE GE C V (reverse conduction) I = 3 A 6 V F F R 1.85 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2003 IXYS All rights reserved 1 - 2 IXYS Semiconductor GmbH IXYS Corporation Edisonstr. 15, D-68623 Lampertheim 3540 Bassett Street, Santa Clara CA 95054 Phone: +49-6206-503-0, Fax: +49-6206-503627 Phone: (408) 982-0700, Fax: 408-496-0670 321 IXBP 5N160 G IXBH 5N160 G Dimensions Component TO-220 AB Symbol Conditions Maximum Ratings T -55...+150 C VJ T -55...+125 C stg M mounting torque (TO-220) 0.6 Nm D (TO-247) 1.2 Nm Symbol Conditions Characteristic Values min. typ. max. R with heatsink compound 0.25 K/W thCH Weight (TO-220) 2 g Dim. Millimeter Inches Min. Max. Min. Max. (TO-247) 6 g A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 C 9.91 10.66 0.390 0.420 D 3.54 4.08 0.139 0.161 E 5.85 6.85 0.230 0.270 F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Q 0.35 0.56 0.014 0.022 R 2.29 2.79 0.090 0.110 TO-247 AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D* 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 2003 IXYS All rights reserved 2 - 2 321