Advance Technical Information High Voltage, High Gain V = 3600V IXBT20N360HV CES TM BIMOSFET Monolithic IXBH20N360HV I = 20A C110 Bipolar MOS Transistor V 3.4V CE(sat) TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 3600 V E CES J C (Tab) V T = 25C to 150C, R = 1M 3600 V CGR J GE V Continuous 20 V GES TO-247HV (IXBH) V Transient 30 V GEM I T = 25C 70 A C25 C I T = 110C 20 A C110 C I T = 25C, 1ms 220 A CM C G SSOA V = 15V, T = 125C, R = 10 I = 160 A E GE VJ G CM (RBSOA) Clamped Inductive Load V 1500 V C (Tab) C CES T V = 15V, T = 125C, SC GE J (SCSOA) R = 52 , V = 1500V, Non-Repetitive 10 s G = Gate C = Collector G CE E = Emitter Tab = Collector P T = 25C 430 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C High Voltage Packages SOLD High Blocking Voltage M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in d High Peak Current Capability Weight TO-268HV 4 g Low Saturation Voltage TO-247HV 6 g Advantages Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25C Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV I = 250A, V = 0V 3600 V CES C GE V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Applications I V = V , V = 0V 25 A CES CE CES GE T = 125C 500 A Switch-Mode and Resonant-Mode J Power Supplies I V = 0V, V = 20V 100 nA GES CE GE Uninterruptible Power Supplies (UPS) V I = 20A, V = 15V, Note 1 2.9 3.4 V CE(sat) C GE Laser Generators T = 125C 3.6 V J Capacitor Discharge Circuits AC Switches 2014 IXYS CORPORATION, All Rights Reserved DS100643(12/14)1 IXBT20N360HV IXBH20N360HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E A E1 L2 C2 g I = 20A, V = 10V, Note 1 10 17 S fs C CE 3 D1 3 D H D2 C 2045 pF ies 1 2 2 1 D3 C V = 25V, V = 0V, f = 1MHz 110 pF A1 oes CE GE L4 C e e b C 50 pF res Q 110 nC g(on) PINS: Q I = 20A, V = 15V, V = 1000V 13 nC 1 - Gate 2 - Emitter ge C GE CE 3 - Collector Q 43 nC gc L3 t 18 ns A2 d(on) L t 14 ns Inductive load, T = 25C ri J E 15.50 mJ I = 20A, V = 15V on C GE t 238 ns V = 1500V, R = 10 d(off) CE G t 206 ns fi Note 2 E 4.30 mJ f of t 20 ns d(on) t 22 ns Inductive load, T = 125C ri J E 16.10 mJ I = 20A, V = 15V on C GE t V = 1500V, R = 10 247 ns d(off) CE G t 216 ns fi Note 2 E 4.15 mJ off t 30 ns d(on) Resistive load, T = 25C J t 325 ns r I = 20A, V = 15V C GE TO-247HV Outline t 165 ns d(off) E A E1 V = 960V, R = 10 R 0P A2 0P1 CE G t 1045 ns f Q S t 32 ns D1 d(on) D 4 Resistive load, T = 125C J t 890 ns r I = 20A, V = 15V D2 C GE 1 2 3 t 185 ns L1 A3 d(off) D3 V = 960V, R = 10 2X E2 CE G E3 t 1100 ns A1 L 4X f R 0.29C/W thJC e b b1 c e1 3X R TO-247HV 0.21 C/W 3X thCS PINS: 1 - Gate 2 - Emitter 3, 4 - Collector Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 20A, V = 0V, Note 1 3.5 V F F GE t 1.7 s rr I = 10A, V = 0V, -di /dt = 100A/s F GE F I 35 A RM V = 100V, V = 0V R GE Q 30 C RM Note: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537