IXBT42N170A IXYS

IXBT42N170A electronic component of IXYS
IXBT42N170A IXYS
IXBT42N170A IGBT Transistors
IXBT42N170A  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of IXBT42N170A IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXBT42N170A IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. IXBT42N170A
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors IGBT BIMOSFET-HIGH VOLT
Datasheet: IXBT42N170A Datasheet (PDF)
Price (USD)
1: USD 31.64 ea
Line Total: USD 31.64 
Availability : 0
  
QtyUnit Price
1$ 31.64
2$ 29.918

Availability 0
Ship by Mon. 22 Sep to Wed. 24 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 31.64
2$ 29.918

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
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We are delighted to provide the IXBT42N170A from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXBT42N170A and other electronic components in the IGBT Transistors category and beyond.

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The IXBT42N170A with IGBT Transistors is a high-voltage bimosfet-insulated gate bipolar transistor (BIMOSFET-HV) manufactured by IXYS. These transistors are commonly used in a variety of high-voltage, high-current applications, such as power switching and motor control. The device features a low on-state voltage drop, low reverse recovery time, and a low gate charge, which enables efficient power operations. It also features high input impedance and low output capacitance, making them suitable for fast-switching applications. Applications include power converters, power supplies, motor control, and switching systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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