Preliminary Technical Information TM High Voltage, BiMOSFET V = 3000V IXBT42N300HV CES Monolithic Bipolar MOS IXBH42N300HV I = 42A C110 Transistor V 3.0V CE(sat) TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 3000 V CES C V T = 25C to 150C, R = 1M 3000 V CGR J GE TO-247HV (IXBH) V Continuous 25 V GES V Transient 35 V GEM I T = 25C 104 A C25 C I T = 110C 42 A C110 C G I T = 25C, 1ms 400 A E CM C C (Tab) C SSOA V = 15V, T = 125C, R = 20 I = 84 A GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V G = Gate C = Collector T V = 15V, T = 125C, 10 s SC GE J E = Emitter Tab = Collector (SCSOA) R = 82, V = 1500V, Non-Repetitive G CE P T = 25C 500 W C C T -55 ... +150 C Features J T 150 C JM High Voltage Package T -55 ... +150 C stg High Blocking Voltage T 1.6mm (0.062 in.) from Case for 10s 300 C L High Peak Current Capability T Plastic Body for 10 seconds 260 C SOLD Low Saturation Voltage M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in d FBSOA SCSOA Weight TO-268HV 4 g TO-247HV 6 g Advantages Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25C Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV I = 1mA, V = 0V 3000 V CES C GE V I = 1mA, V = V 3.0 5.0 V GE(th) C CE GE I V = 0.8 V , V = 0V 50 A CES CE CES GE Applications T = 125C 250 A J Laser Generators I V = 0V, V = 25V 200 nA GES CE GE Capacitor Discharge Circuits V I = 42A, V = 15V, Note 1 2.5 3.0 V CE(sat) C GE AC Switches T = 125C 3.1 V Protection Circuits J 2014 IXYS CORPORATION, All Rights Reserved DS100512A(12/14) IXBT42N300HV IXBH42N300HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E A E1 L2 C2 g I = 42A, V = 10V, Note 1 28 45 S fS C CE 3 D1 3 D H D2 C 4780 pF ies 1 2 2 1 D3 A1 C V = 25V, V = 0V, f = 1MHz 170 pF L4 oes CE GE C e e b C 56 pF res R Gate Input Resistance 3.0 Gi PINS: 1 - Gate 2 - Emitter Q 200 nC 3 - Collector g Q I = 42A, V = 15V, V = 1000V 28 nC L3 ge C GE CE A2 Q 75 nC L gc t 72 ns d(on) Resistive Switching Times, T = 25C J t 330 ns r I = 42A, V = 15V C GE t 445 ns d(off) V = 1500V, R = 20 CE G t 610 ns f t 72 ns d(on) Resistive Switching Times, T = 125C J t 580 ns r I = 42A, V = 15V C GE t 460 ns d(off) V = 1500V, R = 20 CE G t 490 ns f R 0.25 C/W thJC R TO-247HV 0.21 C/W thCS TO-247HV Outline E A E1 R 0P 0P1 A2 Reverse Diode Q S D1 D Symbol Test Conditions Characteristic Values 4 (T = 25C Unless Otherwise Specified) Min. Typ. Max J D2 1 2 3 L1 A3 D3 V I = 42A, V = 0V, Note 1 2.5 V 2X E2 F F GE E3 A1 L 4X t 1.7 s I = 21A, V = 0V, -di /dt = 100A/s rr F GE F I 43 A V = 100V, V = 0V RM R GE e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector Note 1. Pulse test, t < 300s, duty cycle, d < 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537