Advance Technical Information TM BiMOSFET Monolithic V = 3600V IXBX50N360HV CES Bipolar MOS Transistor I = 50A C110 High Voltage, V 2.9V High Frequency CE(sat) TO-247PLUS-HV Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3600 V CES J V T = 25C to 150C, R = 1M 3600 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM E Tab C I T = 25C 125 A C25 C I T = 110C 50 A C110 C I T = 25C, 1ms 420 A CM C G = Gate E = Emitter C = Collector Tab = Collector SSOA V = 15V, T = 125C, R = 5 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V V CES T V = 15V, T = 125C, SC GE J (SCSOA) R = 10 , V = 1500V, Non-Repetitive 10 s G CE P T = 25C 660 W C C T - 55 ... +150 C J Features T 150 C JM T - 55 ... +150 C High Blocking Voltage stg High Voltage Package T Maximum Lead Temperature for Soldering 300 C L Low Conduction Losses T Plastic Body for 10s 260 C SOLD F Mounting Force 20..120/4.5..27 N/lb C Advantages Weight 6 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 3600 V CES C GE Uninterruptible Power Supplies (UPS) V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Switch-Mode and Resonant-Mode I V = 0.8 V , V = 0V 25 A Power Supplies CES CE CES GE Capacitor Discharge Circuits Note 2, T = 125C 1 mA J Laser Generators I V = 0V, V = 20V 200 nA GES CE GE V I = 50A, V = 15V, Note 1 2.4 2.9 V CE(SAT) C GE T = 125C 3.0 V J 2016 IXYS CORPORATION, All Rights Reserved DS100624A(02/16) IXBX50N360HV Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 24 40 S fs C CE C 3990 pF ies C V = 25V, V = 0V, f = 1MHz 195 pF oes CE GE C 100 pF res Q 210 nC g(on) Q I = 50A, V = 15V, V = 1000V 27 nC ge C GE CE Q 77 nC gc t 46 ns d(on) Resistive load, T = 25C J t 420 ns r I = 50A, V = 15V C GE t 205 ns d(off) V = 960V, R = 5 CE G t 1750 ns f t 44 ns d(on) Resistive load, T = 125C J t 845 ns r I = 50A, V = 15V C GE t 210 ns d(off) V = 960V, R = 5 CE G t 1670 ns f R 0.19 C/W thJC R 0.15 C/W thCS Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 50A, V = 0V, Note 1 3.0 V F F GE t 1.7 s rr I = 25A, V = 0V, -di /dt = 100A/s F GE F I 48 A RM V = 100V, V = 0V R GE Q 40 C RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537