TM BiMOSFET Monolithic V = 1700V IXBK75N170A CES Bipolar MOS Transistor I = 65A IXBX75N170A C90 V 6.00V CE(sat) t = 60ns fi(typ) TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J V T = 25C to 150C, R = 1M 1700 V CGR J GE G C Tab V Continuous 20 V GES E V Transient 30 V GEM TM I T = 25C 110 A PLUS247 (IXBX) C25 C I T = 90C 65 A C90 C I T = 25C, 1ms 300 A CM C SSOA V = 15V, T = 125C, R = 1 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V < 0.8 V CE CES G Tab C P T = 25C 1040 W E C C T -55 ... +150 C J G = Gate C = Collector T 150 C E = Emitter Tab = Collector JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD M Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in. International Standard Packages d F Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb. High Blocking Voltage C Fast Switching Weight TO-264 10 g High Current Handling Capability PLUS247 6 g Anti-Parallel Diode Advantages High Power Density Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Intergrated Diode Can Be Used for BV I = 250A, V = 0V 1700 V Protection CES C GE V I = 1.5mA, V = V 2.5 5.5 V GE(th) C CE GE Applications I V = 0.8 V , V = 0V 50 A CES CE CES GE T = 125C 3 mA J Switch-Mode and Resonant-Mode Power Supplies I V = 0V, V = 20V 100 nA GES CE GE UPS V I = 42A, V = 15V, Note 1 4.95 6.00 V CE(sat) C GE AC Motor Drives T = 125C 5.15 V J Substitutes for High Voltage MOSFET DS100166A(8/16) 2016 IXYS CORPORATION, All Rights Reserved IXBK75N170A IXBX75N170A Symbol Test Conditions Characteristic Values TO-264 AA ( IXBK) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 42A, V = 10V, Note 1 28 48 S fS C CE C 7200 pF ies C V = 25V, V = 0V, f = 1MHz 450 pF oes CE GE C 150 pF res Q 358 nC g Q I = 42A, V = 15V, V = 0.5 V 46 nC ge C GE CE CES PINS: 1 - Gate Q 148 nC gc 2,4 - Collector 3 - Emitter t 26 ns d(on) Inductive load, T = 25C J Dim. Millimeter Inches t 40 ns ri Min. Max. Min. Max. I = 42A, V = 15V C GE t 418 ns A 4.82 5.13 .190 .202 d(off) V = 0.8 V , R = 1 A1 2.54 2.89 .100 .114 CE CES G t 60 110 ns A2 2.00 2.10 .079 .083 fi Note 2 b 1.12 1.42 .044 .056 E 3.80 7.00 mJ off b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 t 27 ns d(on) c 0.53 0.83 .021 .033 Inductive load, T = 125C J D 25.91 26.16 1.020 1.030 t 38 ns ri E 19.81 19.96 .780 .786 I = 42A, V = 15V C GE t 420 ns e 5.46 BSC .215 BSC d(off) V = 0.8 V , R = 1 J 0.00 0.25 .000 .010 CE CES G t 175 ns fi K 0.00 0.25 .000 .010 Note 2 E 6.35 mJ L 20.32 20.83 .800 .820 off L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 R 0.12 C/W thJC Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 0.15 C/W thCS R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 TM PLUS 247 (IXBX) Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 42A, V = 0V, Note 1 5.5 V F F GE t 360 ns rr I = 42A, V = 0V, -di /dt = 100A/s F GE F I 19 A RM V = 100V, V = 0V R GE Q 3.5 C RM Terminals: 1 - Gate Notes: 2 - Collector 1. Pulse test, t 300 s duty cycle, d 2%. 3 - Emitter 2. Switching times & energy losses may increase for higher V (Clamp), T or R . Dim. Millimeter Inches CE J G Min. Max. Min. Max. A 4.83 5.21 .190 .205 Additional provisions for lead-to-lead isolation are required at V >1200V. A 2.29 2.54 .090 .100 1 CE A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537