IXDH 20N120 V = 1200 V High Voltage IGBT CES IXDH 20N120 D1 I = 38 A with optional Diode C25 V = 2.4 V CE(sat) typ Short Circuit SOA Capability Square RBSOA C C TO-247 AD G G G C C (TAB) E E E G = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology V T = 25C to 150C 1200 V CES J low saturation voltage V T = 25C to 150C R = 20 k 1200 V CGR J GE low switching losses square RBSOA, no latch up V Continuous 20 V GES high short circuit capability V Transient 30 V GEM positive temperature coefficient for easy paralleling I T = 25C 38 A C25 C MOS input, voltage controlled I T = 90C 25 A C90 C optional ultra fast diode I T = 90C, t = 1 ms 50 A CM C p International standard package RBSOA V = 15 V, T = 125C, R = 82 I = 35 A GE J G CM Clamped inductive load, L = 30 H V < V CEK CES Advantages t V = 15 V, V = V , T = 125C 10 s SC GE CE CES J Space savings (SCSOA) R = 82 , non repetitive G High power density P T = 25C IGBT 200 W C C Diode 75 W Typical Applications T -55 ... +150 C J AC motor speed control T -40< ... +150 C stg DC servo and robot drives Maximum lead temperature for soldering 300 C DC choppers 1.6 mm (0.062 in.) from case for 10 s Uninteruptible power supplies (UPS) Switch-mode and resonant-mode M Mounting torque 0.8 - 1.2 Nm d power supplies Weight 6g Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 0.6 mA, V = V 4.5 6.5 V GE(th) C CE GE I V = V T = 25C 1 mA CES CE CES J T = 125C 2 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 20 A, V = 15 V 2.4 3 V CE(sat) C GE 2004 IXYS All rights reserved 1 - 4 418IXDH 20N120 IXDH 20N120 D1 Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J TO-247 AD Outline min. typ. max. C 1000 pF ies C V = 25 V, V = 0 V, f = 1 MHz 150 pF oes CE GE C 70 pF res Q I = 20 A, V = 15 V, V = 0.5 V 70 nC g C GE CE CES t 100 ns d(on) t 75 ns r Inductive load, T = 125C J t 500 ns d(off) I = 20 A, V = 15 V, C GE t 70 ns f V = 600 V, R = 82 CE G E 3.1 mJ on E 2.4 mJ off R 0.63 K/W thJC R Package with heatsink compound 0.25 K/W thCH Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 Reverse Diode (FRED) D1 version only Characteristic Values 1 b 2.87 3.12 .113 .123 2 (T = 25C, unless otherwise specified) J C .4 .8 .016 .031 Symbol Conditions min. typ. max. D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 V I = 20 A, V = 0 V 2.6 2.9 V F F GE e 5.20 5.72 0.205 0.225 I = 20 A, V = 0 V, T = 125C 2.1 V F GE J L 19.81 20.32 .780 .800 L1 4.50 .177 I T = 25C 31 A F C P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 T = 90C 19 A C R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I I = 20 A, -di /dt = 400 A/s, V = 600 V 15 A RM F F R t V = 0 V, T = 125C 200 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 1.6 K/W thJC 2004 IXYS All rights reserved 2 - 4 418