IXDH 30N120 V = 1200 V High Voltage IGBT CES I = 60 A with optional Diode C25 V = 2.4 V CE(sat) typ Short Circuit SOA Capability Square RBSOA C TO-247 AD G G C Type Replacements E C (TAB) E IXDH30N120D1 IXDH30N120 G = Gate, E = Emitter IXA33IF1200HB C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features V T = 25C to 150C 1200 V NPT IGBT technology CES J V T = 25C to 150C R = 20 k 1200 V low saturation voltage CGR J GE low switching losses V Continuous 20 V GES square RBSOA, no latch up V Transient 30 V GEM high short circuit capability I T = 25C 60 A positive temperature coef cient for C25 C I T = 90C 38 A easy paralleling C90 C I T = 90C t = 1 ms 76 A MOS input, voltage controlled CM C p optional ultra fast diode RBSOA V = 15 V T = 125C R = 47 I = 50 A GE J G CM International standard packages Clamped inductive load L = 30 H V < V CEK CES t V = 15 V V = V T = 125C 10 s Advantages SC GE CE CES J (SCSOA) R = 47 , non repetitive G Space savings P T = 25C IGBT 300 W C C High power density Diode 135 W IXDT: surface mountable high power package T -55 ... +150 C J T -40 ... +150 C stg Typical Applications M Mounting torque 1.1/10 Nm/lb.in. d AC motor speed control DC servo and robot drives Weight 6 g DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 1 mA V = V 4.5 6.5 V GE(th) C CE GE I V = V T = 25C 1.5 mA CES CE CES J T = 125C 2.5 mA J I V = 0 V V = 20 V 500 nA GES CE GE V I = 30 A V = 15 V 2.4 2.9 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 1 - 3 2019 IXYS All rights reserved phase-out IXDH 30N120 Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. C 1650 pF ies C V = 25 V V = 0 V f = 1 MHz 250 pF oes CE GE C 110 pF res Q I = 30 A V = 15 V V = 0.5 V 120 nC g C GE CE CES t 100 ns d(on) t 70 ns r Inductive load, T = 125C t 500 ns J d(off) t 70 ns f I = 30 A V = 15 V C GE E 4.6 mJ on V = 600 V R = 47 CE G E 3.4 mJ off R 0.42 K/W thJC R Package with heatsink compound 0.25 K/W thCK Reverse Diode (FRED) D1 version only Characteristic Values (T = 25C, unless otherwise speci ed) J Symbol Conditions min. typ. max. V I = 30 A V = 0 V 2.5 2.7 V F F GE I = 30 A V = 0 V T = 125C 2.0 V F GE J I T = 25C 60 A F C T = 90C 35 A C I I = 30 A -di /dt = 400 A/s V = 600 V 20 A RM F F R t V = 0 V T = 125C 200 ns rr GE J t I = 1 A -di /dt = 100 A/s V = 30 V V = 0 V 40 ns rr F F R GE R 1 K/W thJC TO-247 AD Outline A D2 E A2 P P1 Sym. Inches Millimeter min. max. min. max. S A 0.185 0.209 4.70 5.30 Q A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D1 D 0.819 0.845 20.79 21.45 D E 0.610 0.640 15.48 16.24 E2 0.170 0.216 4.31 5.48 2x E2 e 0.430 BSC 10.92 BSC 4 L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 1 2 3 P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 L1 E1 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 L b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 2x b2 C E1 0.530 - 13.45 - 3x b P1 - 0.29 - 7.39 A1 e IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 2 - 3 2019 IXYS All rights reserved phase-out