IXDH 30N120 IXDH 30N120 D1 V = 1200 V High Voltage IGBT CES I = 60 A C25 with optional Diode V = 2.4 V CE(sat) typ Short Circuit SOA Capability C C Square RBSOA TO-247 AD (IXDH) G G G C C (TAB) E E E IXDH 30N120 IXDH 30N120 D1 G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology V T = 25C to 150C 1200 V CES J low saturation voltage V T = 25C to 150C R = 20 k 1200 V CGR J GE low switching losses V Continuous 20 V GES square RBSOA, no latch up V Transient 30 V GEM high short circuit capability positive temperature coefficient for I T = 25C 60 A C25 C easy paralleling I T = 90C 38 A C90 C MOS input, voltage controlled I T = 90C t = 1 ms 76 A CM C p optional ultra fast diode International standard packages RBSOA V = 15 V T = 125C R = 47 I = 50 A GE J G CM Clamped inductive load L = 30 H V < V CEK CES Advantages t V = 15 V V = V T = 125C 10 s SC GE CE CES J Space savings (SCSOA) R = 47 , non repetitive G High power density P T = 25C IGBT 300 W IXDT: C C Diode 135 W surface mountable high power package T -55 ... +150 C J Typical Applications T -40 ... +150 C stg AC motor speed control DC servo and robot drives M Mounting torque 1.1/10 Nm/lb.in. d DC choppers Weight 6g Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 1 mA V = V 4.5 6.5 V GE(th) C CE GE I V = V T = 25C 1.5 mA CES CE CES J T = 125C 2.5 mA J I V = 0 V V = 20 V 500 nA GES CE GE V I = 30 A V = 15 V 2.4 2.9 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions. 2005 IXYS All rights reserved 1 - 4 0538IXDH 30N120 IXDH 30N120 D1 Symbol Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. C 1650 pF ies C V = 25 V V = 0 V f = 1 MHz 250 pF oes CE GE C 110 pF res Q I = 30 A V = 15 V V = 0.5 V 120 nC g C GE CE CES t 100 ns d(on) t 70 ns r Inductive load, T = 125C J t 500 ns d(off) I = 30 A V = 15 V t C GE 70 ns f V = 600 V R = 47 E CE G 4.6 mJ on E 3.4 mJ off R 0.42 K/W thJC R Package with heatsink compound 0.25 K/W thCK Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 Reverse Diode (FRED) D1 version only Characteristic Values A 2.2 2.54 .087 .102 1 (T = 25C, unless otherwise specified) J A 2.2 2.6 .059 .098 2 Symbol Conditions min. typ. max. b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 V I = 30 A V = 0 V 2.5 2.7 V F F GE b 2.87 3.12 .113 .123 2 I = 30 A V = 0 V T = 125C 2.0 V C .4 .8 .016 .031 F GE J D 20.80 21.46 .819 .845 I T = 25C 60 A E 15.75 16.26 .610 .640 F C T = 90C 35 A e 5.20 5.72 0.205 0.225 C L 19.81 20.32 .780 .800 L1 4.50 .177 I I = 30 A -di /dt = 400 A/s V = 600 V 20 A RM F F R P 3.55 3.65 .140 .144 t V = 0 V T = 125C 200 ns rr GE J Q 5.89 6.40 0.232 0.252 t I = 1 A -di /dt = 100 A/s V = 30 V V = 0 V 40 ns R 4.32 5.49 .170 .216 rr F F R GE S 6.15 BSC 242 BSC R 1 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2005 IXYS All rights reserved 2 - 4 0538