IXDH35N60B V = 600 V IGBT CES Replacement Types I = 60 A with optional Diode C25 IXXH30N60B3 V = 2.1 V CE(sat) typ IXYH30N65C3 High Speed, Low Saturation Voltage TO-247 AD C G G E C C (TAB) E Gate, Emitter, Collector, TAB = Collector Symbol Conditions Maximum Ratings Features V T = 25C to 150C 600 V NPT IGBT technology CES J low switching losses V T = 25C to 150C R = 20 k 600 V CGR J GE low tail current V Continuous 20 V GES no latch up short circuit capability V Transient 30 V GEM positive temperature coef cient for I T = 25C 60 A C25 C easy paralleling I T = 90C 35 A MOS input, voltage controlled C90 C optional ultra fast diode I T = 90C, t =1 ms 70 A CM C p International standard package RBSOA V = 15 V, T = 125C, R = 10 I = 110 A GE J G CM Clamped inductive load, L = 30 H V < V CEK CES Advantages t V = 15 V, V = 600 V, T = 125C 10 s SC GE CE J (SCSOA) R = 10 , non repetitive G Space savings High power density P T = 25C IGBT 250 W C C Diode 80 W T -55 ... +150 C J Typical Applications T -40 ... +150 C stg AC motor speed control Maximum lead temperature for soldering 300 C DC servo and robot drives 1.6 mm (0.062 in.) from case for 10 s DC choppers Uninteruptible power supplies (UPS) M Mounting torque TO-220 0.4 - 0.6 Nm d Switch-mode and resonant-mode TO-247 0.8 - 1.2 Nm power supplies Weight 6 g Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. V V = 0 V 600 V (BR)CES GE V I = 0.7 mA, V = V 3 5 V GE(th) C CE GE I V = V T = 25C 0.1 mA CES CE CES J T = 125C 1 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 35 A, V = 15 V 2.2 2.7 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 1 - 4 2019 IXYS All rights reserved phase-outIXDH35N60B Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. C 1600 pF ies C V = 25 V, V = 0 V, f = 1 MHz 150 pF oes CE GE C 90 pF res Q I = 35 A, V = 15 V, V = 480 V 120 nC g C GE CE t 30 ns d(on) t 45 ns r t Inductive load, T = 125C 320 ns d(off) J t I = 35 A, V = 15 V, 70 ns f C GE V = 300 V, R = 10 CE G E 1.6 mJ on E 0.8 mJ off R 0.5 K/W thJC R TO 247 Package with heatsink compound 0.25 K/W thCH R TO 220 Package with heatsink compound 0.5 K/W thCH Reverse Diode (FRED) D1 version only Characteristic Values (T = 25C, unless otherwise speci ed) J Symbol Conditions min. typ. max. V I = 35 A, V = 0 V 2.1 2.4 V F F GE I = 35 A, V = 0 V, T = 125C 1.6 V F GE J I T = 25C 45 A F C T = 90C 25 A C I I = 15 A, -di /dt = 400 A/s, V = 300 V 13 A RM F F R t V = 0 V, T = 125C 90 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 1.6 K/W thJC TO-247 AD Outline A D2 E A2 Sym. Inches Millimeter P1 P min. max. min. max. A 0.185 0.209 4.70 5.30 S Q A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 D1 E 0.610 0.640 15.48 16.24 D E2 0.170 0.216 4.31 5.48 2x E2 e 0.215 BSC 5.46 BSC 4 L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 1 2 3 P 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 L1 E1 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 L b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - 2x b2 C D2 0.020 0.053 0.51 1.35 3x b E1 0.530 - 13.45 - b4 A1 P1 - 0.29 - 7.39 2x e IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 2 - 4 2019 IXYS All rights reserved phase-out