X-On Electronics has gained recognition as a prominent supplier of IXDN55N120D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXDN55N120D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXDN55N120D1 IXYS

IXDN55N120D1 electronic component of IXYS
IXDN55N120D1 IXYS
IXDN55N120D1 IGBT Transistors
IXDN55N120D1  Semiconductors

Images are for reference only
See Product Specifications
Part No. IXDN55N120D1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 55 Amps 1200V
Datasheet: IXDN55N120D1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 75.9403
10 : USD 67.5346
100 : USD 57.67
N/A

Obsolete
0
MOQ : 10
Multiples : 10
10 : USD 14.5678
30 : USD 13.985
50 : USD 13.985
150 : USD 13.985
250 : USD 13.985
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 30.378
10 : USD 28.0147
30 : USD 26.7494
100 : USD 23.9155
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 28.985
2 : USD 27.4045
N/A

Obsolete
0
MOQ : 3
Multiples : 1
3 : USD 16.7138
5 : USD 15.1004
10 : USD 14.1555
25 : USD 13.8724
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Package / Case
Packaging
Technology
Mounting Style
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Height
Length
Width
Brand
Continuous Collector Current
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the IXDN55N120D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXDN55N120D1 and other electronic components in the IGBT Transistors category and beyond.

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IXDN 55N120 D1 V = 1200 V High Voltage IGBT CES I = 100 A C25 with optional Diode V = 2.3 V CE(sat) typ Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C E = Emitter , C = Collector Symbol Conditions Maximum Ratings G = Gate, E = Emitter V T = 25C to 150C 1200 V CES J Either Emitter terminal can be used as V T = 25C to 150C R = 20 k 1200 V CGR J GE Main or Kelvin Emitter V Continuous 20 V GES Features V Transient 30 V GEM NPT IGBT technology I T = 25C 100 A C25 C low saturation voltage I T = 90C 62 A C90 C low switching losses square RBSOA, no latch up I T = 90C, t = 1 ms 124 A CM C p high short circuit capability RBSOA V = 15 V, T = 125C, R = 22 I = 100 A GE J G CM positive temperature coefficient for Clamped inductive load, L = 30 H V < V CEK CES easy paralleling MOS input, voltage controlled t V = 15 V, V = V , T = 125C 10 s SC GE CE CES J optional ultra fast diode (SCSOA) R = 22 , non repetitive G International standard package miniBLOC P T = 25C IGBT 450 W C C Diode 220 W Advantages V 50/60 Hz I 1 mA 2500 V~ ISOL ISOL Space savings T -40 ... +150 C J Easy to mount with 2 screws High power density T -40 ... +150 C stg M Mounting torque 1.5/13 Nm/lb.in. d Terminal connection torque (M4) 1.5/13 Nm/lb.in. Typical Applications Weight 30 g AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Symbol Conditions Characteristic Values Switch-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 2 mA, V = V 4.5 6.5 V GE(th) C CE GE I V = V T = 25C 3.8 mA CES CE CES J T = 125C 6 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 55 A, V = 15 V 2.3 2.8 V CE(sat) C GE 2002 IXYS All rights reserved 1 - 4 203IXDN 55N120 D1 Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. C 3300 pF ies C V = 25 V, V = 0 V, f = 1 MHz 500 pF oes CE GE C 220 pF res Q I = 50 A, V = 15 V, V = 0.5 V 240 nC g C GE CE CES t 100 ns d(on) t 70 ns r Inductive load, T = 125C J t 500 ns d(off) I = 55 A, V = 15 V, C GE t 70 ns f V = 600 V, R = 22 CE G E 8.4 mJ on E 6.2 mJ off R 0.28 K/W thJC R Package with heatsink compound 0.1 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. V I = 55 A, V = 0 V 2.4 2.6 V F F GE I = 55 A, V = 0 V, T = 125C 1.9 V F GE J I T = 25C 110 A F C T = 90C 60 A C I I = 55 A, -di /dt = 400 A/s, V = 600 V 40 A RM F F R t V = 0 V, T = 125C 200 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 0.6 K/W thJC miniBLOC, SOT-227 B Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 M4 screws (4x) supplied P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 V 3.30 4.57 0.130 0.180 W 0.780 0.830 19.81 21.08 2002 IXYS All rights reserved 2 - 4 203

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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