IXDN 55N120 D1 V = 1200 V High Voltage IGBT CES I = 100 A C25 with optional Diode V = 2.3 V CE(sat) typ Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C E = Emitter , C = Collector Symbol Conditions Maximum Ratings G = Gate, E = Emitter V T = 25C to 150C 1200 V CES J Either Emitter terminal can be used as V T = 25C to 150C R = 20 k 1200 V CGR J GE Main or Kelvin Emitter V Continuous 20 V GES Features V Transient 30 V GEM NPT IGBT technology I T = 25C 100 A C25 C low saturation voltage I T = 90C 62 A C90 C low switching losses square RBSOA, no latch up I T = 90C, t = 1 ms 124 A CM C p high short circuit capability RBSOA V = 15 V, T = 125C, R = 22 I = 100 A GE J G CM positive temperature coefficient for Clamped inductive load, L = 30 H V < V CEK CES easy paralleling MOS input, voltage controlled t V = 15 V, V = V , T = 125C 10 s SC GE CE CES J optional ultra fast diode (SCSOA) R = 22 , non repetitive G International standard package miniBLOC P T = 25C IGBT 450 W C C Diode 220 W Advantages V 50/60 Hz I 1 mA 2500 V~ ISOL ISOL Space savings T -40 ... +150 C J Easy to mount with 2 screws High power density T -40 ... +150 C stg M Mounting torque 1.5/13 Nm/lb.in. d Terminal connection torque (M4) 1.5/13 Nm/lb.in. Typical Applications Weight 30 g AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Symbol Conditions Characteristic Values Switch-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. V V = 0 V 1200 V (BR)CES GE V I = 2 mA, V = V 4.5 6.5 V GE(th) C CE GE I V = V T = 25C 3.8 mA CES CE CES J T = 125C 6 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 55 A, V = 15 V 2.3 2.8 V CE(sat) C GE 2002 IXYS All rights reserved 1 - 4 203IXDN 55N120 D1 Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. C 3300 pF ies C V = 25 V, V = 0 V, f = 1 MHz 500 pF oes CE GE C 220 pF res Q I = 50 A, V = 15 V, V = 0.5 V 240 nC g C GE CE CES t 100 ns d(on) t 70 ns r Inductive load, T = 125C J t 500 ns d(off) I = 55 A, V = 15 V, C GE t 70 ns f V = 600 V, R = 22 CE G E 8.4 mJ on E 6.2 mJ off R 0.28 K/W thJC R Package with heatsink compound 0.1 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. V I = 55 A, V = 0 V 2.4 2.6 V F F GE I = 55 A, V = 0 V, T = 125C 1.9 V F GE J I T = 25C 110 A F C T = 90C 60 A C I I = 55 A, -di /dt = 400 A/s, V = 600 V 40 A RM F F R t V = 0 V, T = 125C 200 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 0.6 K/W thJC miniBLOC, SOT-227 B Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 M4 screws (4x) supplied P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 V 3.30 4.57 0.130 0.180 W 0.780 0.830 19.81 21.08 2002 IXYS All rights reserved 2 - 4 203