X-On Electronics has gained recognition as a prominent supplier of IXDN75N120 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXDN75N120 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXDN75N120 IXYS

IXDN75N120 electronic component of IXYS
Images are for reference only
See Product Specifications
Part No.IXDN75N120
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 75 Amps 1200V
Datasheet: IXDN75N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 36.413 ea
Line Total: USD 36.41

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 49.8625
10 : USD 44.1528
100 : USD 37.7035

0
Ship by Thu. 01 Aug to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 23.2329
10 : USD 22.2077
25 : USD 21.216
100 : USD 20.0349
250 : USD 19.0989
500 : USD 18.7869
1000 : USD 18.4971
2500 : USD 18.0626
5000 : USD 17.628

0
Ship by Fri. 26 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 36.92
2 : USD 34.918

   
Manufacturer
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RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
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Technology
Mounting Style
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
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Length
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Continuous Collector Current
Cnhts
Hts Code
Mxhts
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We are delighted to provide the IXDN75N120 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXDN75N120 and other electronic components in the IGBT Transistors category and beyond.

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IXDN 75N120 V = 1200 V High Voltage IGBT CES I = 150 A C25 V = 2.2 V CE(sat) typ Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Symbol Conditions Maximum Ratings E = Emitter , C = Collector G = Gate, E = Emitter V T = 25C to 150C 1200 V CES J Either Emitter terminal can be used as V T = 25C to 150C R = 20 k 1200 V Main or Kelvin Emitter CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 150 A C25 C Features I T = 90C 95 A C90 C I T = 90C, t = 1 ms 190 A CM C p NPT IGBT technology low saturation voltage RBSOA V = 15 V, T = 125C, R = 15 I = 150 A GE J G CM low switching losses Clamped inductive load, L = 30 H V < V CEK CES square RBSOA, no latch up high short circuit capability t V = 15 V, V = V , T = 125C 10 s SC GE CE CES J positive temperature coefficient for (SCSOA) R = 15 , non repetitive G easy paralleling P T = 25C IGBT 660 W C C MOS input, voltage controlled International standard package V 50/60 Hz I 1 mA 2500 V~ ISOL ISOL miniBLOC T -40 ... +150 C J T -40 ... +150 C stg Advantages M Mounting torque 1.5/13 Nm/lb.in. d Space savings Terminal connection torque (M4) 1.5/13 Nm/lb.in. Easy to mount with 2 screws High power density Weight 30 g Typical Applications Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) AC motor speed control J DC servo and robot drives min. typ. max. DC choppers V V = 0 V 1200 V (BR)CES GE Uninteruptible power supplies (UPS) Switch-mode and resonant-mode V I = 3 mA, V = V 4.5 6.5 V GE(th) C CE GE power supplies I V = V T = 25C 4 mA CES CE CES J T = 125C 6 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 75 A, V = 15 V 2.2 2.7 V CE(sat) C GE 2000 IXYS All rights reserved 1 - 4 031IXDN 75N120 Symbol Conditions Characteristic Values miniBLOC, SOT-227 B (T = 25C, unless otherwise specified) J min. typ. max. C 5500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 750 pF oes CE GE C 330 pF res Q I = 75 A, V = 15 V, V = 0.5 V 360 nC g C GE CE CES t 100 ns d(on) t 50 ns r Inductive load, T = 125C J t 650 ns d(off) I = 75 A, V = 15 V, C GE t 50 ns f V = 600 V, R = 15 CE G E 12.1 mJ M4 screws (4x) supplied on E 10.5 mJ off Dim. Millimeter Inches R 0.19 K/W Min. Max. Min. Max. thJC A 31.50 31.88 1.240 1.255 R Package with heatsink compound 0.1 K/W thCK B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 V 3.30 4.57 0.130 0.180 W 0.780 0.830 19.81 21.08 2000 IXYS All rights reserved 2 - 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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