IXDP20N60B V = 600 V High Voltage IGBT CES Replacement I = 32 A with optional Diode C25 IXYP20N65B3 V = 2.2 V CE(sat) typ High Speed, Low Saturation Voltage C TO-220 AB G G C C (TAB) E E G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features V T = 25C to 150C 600 V NPT IGBT technology CES J low switching losses V T = 25C to 150C R = 20 k 600 V CGR J GE low tail current V Continuous 20 V GES no latch up short circuit capability V Transient 30 V GEM positive temperature coef cient for I T = 25C 32 A C25 C easy paralleling I T = 90C 20 A MOS input, voltage controlled C90 C optional ultra fast diode I T = 90C, t =1 ms 40 A CM C p International standard package RBSOA V = 15 V, T = 125C, R = 22 I = 60 A GE J G CM Clamped inductive load, L = 30 H V < V CEK CES Advantages t V = 15 V, V = 600 V, T = 125C 10 s SC GE CE J (SCSOA) R = 22 , non repetitive G Space savings P T = 25C IGBT 140 W High power density C C Diode 50 W T -55 ... +150 C J Typical Applications T -40 ... +150 C stg AC motor speed control Maximum lead temperature for soldering 300 C DC servo and robot drives 1.6 mm (0.062 in.) from case for 10 s DC choppers Uninteruptible power supplies (UPS) M Mounting torque 0.4 - 0.6 Nm d Switch-mode and resonant-mode Weight 2 g power supplies Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. V V = 0 V 600 V (BR)CES GE V I = 0.4 mA, V = V 3 5 V GE(th) C CE GE I V = V T = 25C 0.1 mA CES CE CES J T = 125C 0.7 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 20 A, V = 15 V 2.2 2.8 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 1 - 4 2019 IXYS All rights reserved phase-outIXDP20N60B Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. C 800 pF ies C V = 25 V, V = 0 V, f = 1 MHz 85 pF oes CE GE C 50 pF res Q I = 20 A, V = 15 V, V = 480 V 70 nC g C GE CE t 25 ns d(on) t 30 ns r Inductive load, T = 125C t 260 ns J d(off) I = 20 A, V = 15 V, t 55 ns C GE f V = 300 V, R = 22 CE G E 0.9 mJ on E 0.4 mJ off R 0.9 K/W thJC R Package with heatsink compound 0.5 K/W thCH R Package with heatsink compound 0.25 K/W thCK TO-220 AB Outline A E P A1 Q H Millimeters Inches Dim. D min max min max A 4.50 4.90 0.177 0.193 A1 2.34 2.74 0.092 0.108 1 2 3 A2 2.56 2.96 0.101 0.117 L1 b 0.70 0.90 0.028 0.035 A2 c 0.45 0.60 0.018 0.024 D L 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 0.408 e 2.54 BSC 0.100 BSC H 6.48 6.88 0.255 0.271 b1 c b e L 12.68 13.28 0.499 0.523 L1 3.03 3.43 0.119 0.135 P 3.08 3.28 0.121 0.129 Q 3.20 3.40 0.126 0.134 IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 2 - 4 2019 IXYS All rights reserved phase-out