IXDP35N60B V = 600 V IGBT CES Replacement Type I = 60 A with optional Diode C25 IXYP30N65C3 V = 2.1 V CE(sat) typ High Speed, Low Saturation Voltage TO-220 AB C G G C E E C (TAB) Gate, Emitter, Collector, TAB = Collector Symbol Conditions Maximum Ratings Features V T = 25C to 150C 600 V NPT IGBT technology CES J low switching losses V T = 25C to 150C R = 20 k 600 V CGR J GE low tail current V Continuous 20 V GES no latch up V Transient 30 V short circuit capability GEM positive temperature coef cient for I T = 25C 60 A C25 C easy paralleling I T = 90C 35 A MOS input, voltage controlled C90 C optional ultra fast diode I T = 90C, t =1 ms 70 A CM C p International standard package RBSOA V = 15 V, T = 125C, R = 10 I = 110 A GE J G CM Clamped inductive load, L = 30 H V < V CEK CES Advantages t V = 15 V, V = 600 V, T = 125C 10 s SC GE CE J (SCSOA) R = 10 , non repetitive G Space savings P T = 25C IGBT 250 W High power density C C Diode 80 W T -55 ... +150 C J Typical Applications T -40 ... +150 C stg AC motor speed control Maximum lead temperature for soldering 300 C DC servo and robot drives 1.6 mm (0.062 in.) from case for 10 s DC choppers Uninteruptible power supplies (UPS) M Mounting torque TO-220 0.4 - 0.6 Nm d Switch-mode and resonant-mode TO-247 0.8 - 1.2 Nm power supplies Weight 6 g Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. V V = 0 V 600 V (BR)CES GE V I = 0.7 mA, V = V 3 5 V GE(th) C CE GE I V = V T = 25C 0.1 mA CES CE CES J T = 125C 1 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 35 A, V = 15 V 2.2 2.7 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 1 - 4 2019 IXYS All rights reserved phase-outIXDP35N60B Symbol Conditions Characteristic Values (T = 25C, unless otherwise speci ed) J min. typ. max. C 1600 pF ies C V = 25 V, V = 0 V, f = 1 MHz 150 pF oes CE GE C 90 pF res Q I = 35 A, V = 15 V, V = 480 V 120 nC g C GE CE t 30 ns d(on) t 45 ns r t Inductive load, T = 125C 320 ns d(off) J t I = 35 A, V = 15 V, 70 ns f C GE V = 300 V, R = 10 CE G E 1.6 mJ on E 0.8 mJ off R 0.5 K/W thJC R TO 247 Package with heatsink compound 0.25 K/W thCH R TO 220 Package with heatsink compound 0.5 K/W thCH Reverse Diode (FRED) D1 version only Characteristic Values (T = 25C, unless otherwise speci ed) J Symbol Conditions min. typ. max. V I = 35 A, V = 0 V 2.1 2.4 V F F GE I = 35 A, V = 0 V, T = 125C 1.6 V F GE J I T = 25C 45 A F C T = 90C 25 A C I I = 15 A, -di /dt = 400 A/s, V = 300 V 13 A RM F F R t V = 0 V, T = 125C 90 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 1.6 K/W thJC TO-220 AB Outline A = supplier option Dim. Millimeter Inches A1 Min. Max. Min. Max. E A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 P b 0.64 1.01 0.025 0.040 4 b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC 1 2 3 H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 3x b2 L1 2.79 5.84 0.110 0.230 P 3.54 4.08 0.139 0.161 Q 2.54 3.18 0.100 0.125 C 3x b 2x e A2 IXYS reserves the right to change limits, test conditions and dimensions. 20190131a 2 - 4 2019 IXYS All rights reserved phase-out L1 Q L D H1