IXDR 35N60 BD1 V = 600 V IGBT CES I =38A C25 with optional Diode V = 2.2 V CE(sat) typ High Speed, Low Saturation Voltage TM C ISOPLUS 247 G G C E Isolated back surface E G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology V T = 25C to 150C 600 V CES J low switching losses V T = 25C to 150C R = 20 k 600 V CGR J GE low tail current no latch up V Continuous 20 V GES short circuit capability V Transient 30 V GEM positive temperature coefficient for easy paralleling I T = 25C 38 A C25 C MOS input, voltage controlled I T = 90C 24 A C90 C optional ultra fast diode I T = 90C, t =1 ms 48 A CM C p Epoxy meets UL 94V-0 Isolated and UL registered E153432 RBSOA V = 15 V, T = 125C, R = 10 I = 110 A GE J G CM Clamped inductive load, L = 30 H V < V CEK CES Advantages t V = 15 V, V = 600 V, T = 125C 10 s SC GE CE J (SCSOA) R = 10 , non repetitive G DCB Isolated mounting tab Meets TO-247AD package Outline P T = 25C IGBT 125 W C C Package for clip or spring mounting Diode 50 W Space savings T -55 ... +150 C J High power density T -55 ... +150 C stg V 50/60 Hz RMS I 1 mA 2500 V~ ISOL ISOL Typical Applications F mounting force with clip 20...120 N C AC motor speed control DC servo and robot drives Weight typical 6 g DC choppers Uninterruptible power supplies (UPS) Symbol Conditions Characteristic Values Switch-mode and resonant-mode (T = 25C, unless otherwise specified) power supplies J min. typ. max. V V = 0 V 600 V (BR)CES GE V I = 0.7 mA, V = V 35V GE(th) C CE GE I V = V T = 25C 0.1 mA CES CE CES J T = 125C 1 mA J I V = 0 V, V = 20 V 500 nA GES CE GE V I = 35 A, V = 15 V 2.2 2.7 V CE(sat) C GE IXYS reserves the right to change limits, test conditions and dimensions 2006 IXYS All rights reserved 1 - 4 0644IXDR 35N60 BD1 Symbol Conditions Characteristic Values TM ISOPLUS247 OUTLINE (T = 25C, unless otherwise specified) J min. typ. max. C 1600 pF ies C V = 25 V, V = 0 V, f = 1 MHz 150 pF oes CE GE C 90 pF res Q I = 35 A, V = 15 V, V = 480V 140 nC g C GE CE t 30 ns d(on) t 45 ns r Inductive load, T = 125C J t 320 ns d(off) I = 35 A, V = 15 V, C GE t 70 ns f V = 300 V, R = 10 CE G E 1.6 mJ on E 0.8 mJ off R 1 K/W thJC R Package with heatsink compound 0.25 K/W thCH Reverse Diode (FRED) D1 version only Characteristic Values (T = 25C, unless otherwise specified) J Symbol Conditions min. typ. max. V I = 35 A, V = 0 V 2.1 2.3 V F F GE I = 35 A, V = 0 V, T = 125C 1.6 V F GE J I T = 25C 35 A F C The convex bow of substrate is typ. < 0.04 mm over plastic surface level T = 90C 18 A of device bottom side C This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. I I = 15 A, -di /dt = 400 A/s, V = 300 V 13 A RM F F R t V = 0 V, T = 125C 90 ns rr GE J t I = 1 A, -di /dt = 100 A/s, V = 30 V, V = 0 V 40 ns rr F F R GE R 2.3 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions 2006 IXYS All rights reserved 2 - 4 0644